中国物理学会期刊网
物理学报  2018, Vol.67 Issue (12): 128102  DOI:10.7498/aps.67.20180796
拓扑半金属材料的单晶生长研究进展
1. 中国科学院物理研究所, 北京凝聚态物理国家研究中心, 北京 100190;2. 中国科学院大学物理科学学院, 北京 100049>
Research progress of single crystal growth for topological semimetals
1. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;2. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China>

摘要

拓扑半金属已经成为凝聚态物理研究的一个热点领域,这类材料的单晶生长是研究其物理性质的基础.目前,对于拓扑材料的研究已经形成了以理论计算为指引,对潜在的拓扑材料进行单晶制备,并结合物性测量对理论预言加以验证的科研合作方式.在这种科研团队合作中,单晶生长起衔接作用.本文介绍了近年来拓扑半金属材料单晶生长方法,涵盖了拓扑Dirac半金属、Weyl半金属、Node-Line半金属以及其他打破常规分类的拓扑绝缘体及拓扑半金属材料等,并针对各个材料,详细总结了其生长方法.

Abstract

Topological semimetals have attracted much attention and become a hot subject in condensed matter physics, and single crystal growth is the basis of the physical investigation on these materials. At present, the research of topological materials has formed a cooperation circle:presenting materials by theoretical calculation; single crystal growth; verification by experiments on single crystals. Single crystal growth has become a bridge between theory and experiment. Here in this paper, we introduce the single crystal growth of the topological semimetals presented in recent years, including topological Dirac semimetals, Weyl semimetals, Node-Line semimetals and other new classes of topological materials. The detailed growth methods are summarized in this paper for each material.
收稿日期:2018-04-24

基金资助

国家重点研发计划(批准号:2017YFA0302901,2016YFA0300604)、国家自然科学基金(批准号:11774399,11474330)、中国科学院战略性先导科技专项(B类)(批准号:XDB07020100)和中国科学院前沿科学重点研究项目(批准号:QYZDB-SSW-SLH043)资助的课题.
Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFA0302901, 2016YFA0300604), the National Natural Science Foundation of China (Grant Nos. 11774399, 11474330), the Strategic Priority Research Program (B) of Chinese Academy of Sciences (Grant No. XDB07020100), and the Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH043).

引用本文

[中文]
伊长江, 王乐, 冯子力, 杨萌, 闫大禹, 王翠香, 石友国. 拓扑半金属材料的单晶生长研究进展[J]. 物理学报, 2018, 67(12): 128102.
[英文]
Yi Chang-Jiang, Wang Le, Feng Zi-Li, Yang Meng, Yan Da-Yu, Wang Cui-Xiang, Shi You-Guo. Research progress of single crystal growth for topological semimetals[J]. Acta Phys. Sin., 2018, 67(12): 128102.
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