中国物理学会期刊网
Chin.Phys.B  2017, Vol.26 Issue (12): 124210  DOI:10.1088/1674-1056/26/12/124210
Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide
1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China;2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;3. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;4. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;5. Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China>

Abstract

The upper waveguide (UWG) has direct influences on the optical and electrical characteristics of the violet laser diode (LD) by changing the optical field distribution or barrier of the electron blocking layer (EBL). In this study, a series of InGaN-based violet LDs with different UWGs are investigated systematically with LASTIP software. It is found that the output light power (OLP) under an injecting current of 120 mA or the threshold current (Ith) is deteriorated when the UWG is u-In0.02Ga0.98N/GaN or u-In0.02Ga0.98N/AlxGa1-xN (0 ≤ x ≤ 0.1), which should be attributed to small optical confinement factor (OCF) or severe electron leakage. Therefore, a new violet LD structure with u-In0.02Ga0.98N/GaN/Al0.05Ga0.95N multiple layer UWG is proposed to reduce the optical loss and increase the barrier of EBL. Finally, the output light power under an injecting current of 120 mA is improved to 176.4 mW.
收稿日期:2017-08-03

基金资助

Project supported by the National Key R & D Program of China (Grant Nos. 2016YFB0400803 and 2016YFB0401801), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), the Science Challenge Project, China (Grant No. TZ2016003), and the Beijing Municipal Science and Technology Project, China (Grant No. Z161100002116037).

引用本文

[英文]
Feng Liang, De-Gang Zhao, De-Sheng Jiang, Zong-Shun Liu, Jian-Jun Zhu, Ping Chen, Jing Yang, Wei Liu, Shuang-Tao Liu, Yao Xing, Li-Qun Zhang, Wen-Jie Wang, Mo Li, Yuan-Tao Zhang, Guo-Tong Du. Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide[J]. Chin. Phys. B, 2017, 26(12): 124210.
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