1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China>
InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb barriers of the lasers are grown with digital alloy techniques consisting of binary AlSb/AlAs/GaSb short-period pairs. Peak power conversion efficiency of 26% and an efficiency higher than 16% at 1 W are achieved at continuous-wave operation for a 2-mm-long and 100-μm-wide stripe laser. The maximum output power of a single emitter reaches to 1.4 W at 7 A. 19-emitter bars with maximum efficiency higher than 20% and maximum power of 16 W are fabricated. Lasers with the short-period-pair barriers are proved to have improved temperature properties and wavelength stabilities. The characteristic temperature (T0) is up to 140℃ near room temperature (25-55℃).
Project supported by the National Natural Science Foundation of China (Grant Nos. 61790580 and 61435012), the National Basic Research Program of China (Grant No. 2014CB643903), and the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032).
Sheng-Wen Xie, Yu Zhang, Cheng-Ao Yang, Shu-Shan Huang, Ye Yuan, Yi Zhang, Jin-Ming Shang, Fu-Hui Shao, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu. High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars[J]. Chin. Phys. B, 2019, 28(1): 014208.