中国物理学会期刊网
Chin. Phys. Lett.  2018, Vol.35 Issue (2): 027303  DOI:10.1088/0256-307X/35/2/027303
Observation of Tunneling Gap in Epitaxial Ultrathin Films of Pyrite-Type Copper Disulfide
1State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 1000842Collaborative Innovation Center of Quantum Matter, Beijing 100084>

Abstract

We report scanning tunneling microscopy investigation on epitaxial ultrathin films of pyrite-type copper disulfide. Layer-by-layer growth of CuS$_{2}$ films with a preferential orientation of (111) on SrTiO$_{3}$(001) and Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+\delta}$ substrates is achieved by molecular beam epitaxy growth. For ultrathin films on both kinds of substrates, we observe symmetric tunneling gap around the Fermi level that persists up to $\sim$15?K. The tunneling gap degrades with either increasing temperature or increasing thickness, suggesting new matter states at the extreme two-dimensional limit.
收稿日期:2018-01-15

基金资助

Supported by the National Natural Science Foundation of China under Grant Nos 11574174, 11774193 and 11790311, and the National Basic Research Program of China under Grant No 2015CB921000.

引用本文

[英文]
Chong Liu, Haohao Yang, Can-Li Song, Wei Li, Ke He, Xu-Cun Ma, Lili Wang, Qi-Kun Xue. Observation of Tunneling Gap in Epitaxial Ultrathin Films of Pyrite-Type Copper Disulfide[J]. CPL, 2018, 35(2): 027303.
使用本文
PACS
本文作者
阅读笔记
在左边选中内容后,点击→加入笔记。笔记内容将复制到下面文本框中,点击保存按钮可保存在个人文献中心中
              
数据正在加载中...
中国物理学会期刊网