980 nm半导体激光器n型波导结构优化

安宁; 芦鹏; 魏志鹏; 李占国; 马晓辉; 刘国军

doi:10.11884/HPLPB201426.101015

强激光与粒子束

980 nm半导体激光器n型波导结构优化

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安宁, 芦鹏, 魏志鹏, 李占国, 马晓辉, 刘国军. 2014: 980 nm半导体激光器n型波导结构优化, 强激光与粒子束, null(10): 101015. doi: 10.11884/HPLPB201426.101015

引用本文:

安宁, 芦鹏, 魏志鹏, 李占国, 马晓辉, 刘国军. 2014: 980 nm半导体激光器n型波导结构优化, 强激光与粒子束, null(10): 101015. doi: 10.11884/HPLPB201426.101015

An Ning, Lu Peng, Wei Zhipeng, Li Zhanguo, Ma Xiaohui, Liu Guoj un. 2014: Optimization of n-type waveguide structure for 980 nm diode laser, High Power Lase and Particle Beams, null(10): 101015. doi: 10.11884/HPLPB201426.101015

Citation:

An Ning, Lu Peng, Wei Zhipeng, Li Zhanguo, Ma Xiaohui, Liu Guoj un. 2014: Optimization of n-type waveguide structure for 980 nm diode laser, High Power Lase and Particle Beams, null(10): 101015. doi: 10.11884/HPLPB201426.101015

980 nm半导体激光器n型波导结构优化

长春理工大学高功率半导体激光国家重点实验室,长春,130022

Optimization of n-type waveguide structure for 980 nm diode laser

摘要: 为了提高980 nm半导体激光器的输出功率并获得较小的远场发散角,在非对称波导结构的基础上设计了 n型波导结构,即在 n型波导中引入高折射率的内波导层。采用理论计算和 SimLastip 软件模拟对常规非对称波导结构和内波导结构进行了研究。利用分子束外延系统生长980 nm 内波导结构的外延材料,并制作了激光器。对于条宽为100μm、腔长为1000μm的器件,阈值电流为97 mA,斜率效率为1.01 W/A；当注入电流为500 mA时,远场发散角为29°(垂直向)×8°(水平向),与模拟结果相符。理论计算和实验结果表明：较之于常规非对称波导结构,内波导结构可有效降低光场限制因子,提高输出功率,减小远场发散角。
- 980 nm半导体激光器 /
- 输出功率 /
- 内波导 /
- 远场发散角
Abstract: In order to raise the output power and lower the far field divergence angles of 980 nm diode laser,a high refrac-tive index inner waveguide is introduced in the n-type waveguide structure,which is based on the asymmetric waveguide struc-ture.The research is conducted by SimLastip.Meanwhile,the semiconductor laser is fabricated with the epitaxial layer grown by a solid source molecular beam epitaxy (MBE)system.The fabricated 980 nm laser diode with 100μm strip width and 1000μm cavity length has a threshold current of 97 mA and a slope efficiency of 1.01 W/A.When the injection current is 500 mA,the far field divergence angles are 2 9°(vertical)by 8°(horizontal),which is consistent with the simulated result.The theoretical and ex-perimental results indicate that the inner waveguide structure can achieve high power output,effectively reduce the far field diver-gence angle and improve the beam quality of the device.

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980 nm半导体激光器n型波导结构优化

长春理工大学高功率半导体激光国家重点实验室,长春,130022

关键词:

摘要: 为了提高980 nm半导体激光器的输出功率并获得较小的远场发散角,在非对称波导结构的基础上设计了 n型波导结构,即在 n型波导中引入高折射率的内波导层。采用理论计算和 SimLastip 软件模拟对常规非对称波导结构和内波导结构进行了研究。利用分子束外延系统生长980 nm 内波导结构的外延材料,并制作了激光器。对于条宽为100μm、腔长为1000μm的器件,阈值电流为97 mA,斜率效率为1.01 W/A；当注入电流为500 mA时,远场发散角为29°(垂直向)×8°(水平向),与模拟结果相符。理论计算和实验结果表明：较之于常规非对称波导结构,内波导结构可有效降低光场限制因子,提高输出功率,减小远场发散角。

English Abstract

Optimization of n-type waveguide structure for 980 nm diode laser

长春理工大学高功率半导体激光国家重点实验室,长春,130022

Keywords:

Abstract: In order to raise the output power and lower the far field divergence angles of 980 nm diode laser,a high refrac-tive index inner waveguide is introduced in the n-type waveguide structure,which is based on the asymmetric waveguide struc-ture.The research is conducted by SimLastip.Meanwhile,the semiconductor laser is fabricated with the epitaxial layer grown by a solid source molecular beam epitaxy (MBE)system.The fabricated 980 nm laser diode with 100μm strip width and 1000μm cavity length has a threshold current of 97 mA and a slope efficiency of 1.01 W/A.When the injection current is 500 mA,the far field divergence angles are 2 9°(vertical)by 8°(horizontal),which is consistent with the simulated result.The theoretical and ex-perimental results indicate that the inner waveguide structure can achieve high power output,effectively reduce the far field diver-gence angle and improve the beam quality of the device.

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980 nm半导体激光器n型波导结构优化

Optimization of n-type waveguide structure for 980 nm diode laser

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980 nm半导体激光器n型波导结构优化

English Abstract

Optimization of n-type waveguide structure for 980 nm diode laser

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