基于MOSFET的纳秒级全固态脉冲源设计

李玺钦; 吴红光; 栾崇彪; 肖金水; 谢敏; 李洪涛; 马成刚

doi:10.11884/HPLPB201729.160475

强激光与粒子束

基于MOSFET的纳秒级全固态脉冲源设计

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李玺钦, 吴红光, 栾崇彪, 肖金水, 谢敏, 李洪涛, 马成刚. 2017: 基于MOSFET的纳秒级全固态脉冲源设计, 强激光与粒子束, 29(4): 82-86. doi: 10.11884/HPLPB201729.160475

引用本文:

李玺钦, 吴红光, 栾崇彪, 肖金水, 谢敏, 李洪涛, 马成刚. 2017: 基于MOSFET的纳秒级全固态脉冲源设计, 强激光与粒子束, 29(4): 82-86. doi: 10.11884/HPLPB201729.160475

Li Xiqin, Wu Hongguang, Luan Chongbiao, Xiao Jinshui, Xie Min, Li Hongtao, Ma Chenggang. 2017: Design of nanosecond all-solid-state pulse source based on MOSFET semiconductor switch, High Power Lase and Particle Beams, 29(4): 82-86. doi: 10.11884/HPLPB201729.160475

Citation:

Li Xiqin, Wu Hongguang, Luan Chongbiao, Xiao Jinshui, Xie Min, Li Hongtao, Ma Chenggang. 2017: Design of nanosecond all-solid-state pulse source based on MOSFET semiconductor switch, High Power Lase and Particle Beams, 29(4): 82-86. doi: 10.11884/HPLPB201729.160475

基于MOSFET的纳秒级全固态脉冲源设计

中国工程物理研究院流体物理研究所,脉冲功率科学与技术重点实验室,四川绵阳621900

Design of nanosecond all-solid-state pulse source based on MOSFET semiconductor switch

摘要: 采用MOSFET半导体固态开关作为主放电开关取代气体开关、高压二极管替代充电电阻的技术方法,设计了一种基于功率MOSFET固态开关的纳秒级全固态脉冲源.设计的脉冲源主开关级数共5级,每级主开关分别由5只功率MOSFET半导体固态开关器件串联组成,开关通断控制采用脉冲隔离变压器同步驱动方式.在重复频率1 Hz～1 kHz、充电电压4 kV、负载阻抗为1 kΩ条件下,可实现输出幅度大于20kV、前沿小于10 ns且脉宽大于100 ns的高压快脉冲.通过实验结果验证了所采用的设计原理及方法的可行性,并给出了单次和重复频率(1 kHz)触发信号作用下全固态脉冲源输出的实验结果.
- 功率MOSFET /
- 纳秒级前沿 /
- 半导体固态开关 /
- 全固态 /
- Marx发生器
Abstract: This paper designs a all-solid-state pulse source with the output capability of repetition frequency and fast rise time,using MOSFET semiconductor switch instead of spark gap switch as primary discharge switch and power diode instead of charging resistor to reduce power dissipation.The pulse source has five stages,each stage includes 5 MOSFETs,which are triggered by a pulsed isolated transformer.Under repetition frequency 1 Hz-1 kHz,charge voltage 4-5 kV and load resistor 1 kΩ,the pulse source can output a high voltage pulse with amplitude more than 20 kV,rise time less than 10 ns,pulse width more than 100 ns.The paper gives the experimental results of output high voltage pulses with repetition frequency of 1Hz and 1 kHz,which verify the feasibility of design principle and method.

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基于MOSFET的纳秒级全固态脉冲源设计

中国工程物理研究院流体物理研究所,脉冲功率科学与技术重点实验室,四川绵阳621900

关键词:

摘要: 采用MOSFET半导体固态开关作为主放电开关取代气体开关、高压二极管替代充电电阻的技术方法,设计了一种基于功率MOSFET固态开关的纳秒级全固态脉冲源.设计的脉冲源主开关级数共5级,每级主开关分别由5只功率MOSFET半导体固态开关器件串联组成,开关通断控制采用脉冲隔离变压器同步驱动方式.在重复频率1 Hz～1 kHz、充电电压4 kV、负载阻抗为1 kΩ条件下,可实现输出幅度大于20kV、前沿小于10 ns且脉宽大于100 ns的高压快脉冲.通过实验结果验证了所采用的设计原理及方法的可行性,并给出了单次和重复频率(1 kHz)触发信号作用下全固态脉冲源输出的实验结果.

English Abstract

Design of nanosecond all-solid-state pulse source based on MOSFET semiconductor switch

中国工程物理研究院流体物理研究所,脉冲功率科学与技术重点实验室,四川绵阳621900

Keywords:

Abstract: This paper designs a all-solid-state pulse source with the output capability of repetition frequency and fast rise time,using MOSFET semiconductor switch instead of spark gap switch as primary discharge switch and power diode instead of charging resistor to reduce power dissipation.The pulse source has five stages,each stage includes 5 MOSFETs,which are triggered by a pulsed isolated transformer.Under repetition frequency 1 Hz-1 kHz,charge voltage 4-5 kV and load resistor 1 kΩ,the pulse source can output a high voltage pulse with amplitude more than 20 kV,rise time less than 10 ns,pulse width more than 100 ns.The paper gives the experimental results of output high voltage pulses with repetition frequency of 1Hz and 1 kHz,which verify the feasibility of design principle and method.

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基于MOSFET的纳秒级全固态脉冲源设计

Design of nanosecond all-solid-state pulse source based on MOSFET semiconductor switch

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基于MOSFET的纳秒级全固态脉冲源设计

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Design of nanosecond all-solid-state pulse source based on MOSFET semiconductor switch

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