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20kV/20kHz/100A高压脉冲源设计
Design of 20kV/20kHz/100A high voltage pulse generator
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摘要: 设计了一种基于功率金属氧化物半导体场效应晶体管(MOSFET)为开关的高压脉冲电源.采用自匹配传输线结构线路形式,串联多个以光纤信号隔离触发的 MOSFET 作为高耐压开关,在传输线的外皮产生2个纳秒脉冲,再用传输线变压器对2个纳秒脉冲进行功率合成,在200 Ω负载上输出了幅度20 kV,重复频率20 kHz,脉冲宽度约40 ns 的脉冲.分析脉冲源装置结构,对实验装置建立仿真模型,阐述了输出波形畸变的原因,给出了影响输出脉冲波形特性的因素,为下一步优化波形工作提供了理论参考.Abstract: The paper presents a design of high voltage pulse generator based on high voltage switch formed by a stack of metal oxide semiconductor field-effect transistor (MOSFET).Two pulses at both ends of out metal layer in transmission line are generated by the self-matched transmission line circuit using high voltage switch made by many opto-isolator triggering MOSFETs in series.Then,a higher power pulse with amplitude of 20 kV on 200 Ω load,duration of about 40 ns and repetition frequency of 20 kHz is generated by the technique that transmission line transformers (TLTs)synthesize two pulses.An emulational circuit model is designed after the structure of pulse generation device is analyzed.The distortion of output pulse is analyzed by the mod-el.Factors influencing the output pulse waveform are discussed.A reference for optimizing output pulse is put forward.
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