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Si基Si3N4/SiO2双层膜驻极体的电荷储存与输运

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张晓青, 夏钟福, 张冶文, G.M.Sessler. 2001: Si基Si3N4/SiO2双层膜驻极体的电荷储存与输运, 物理学报, 50(2): 293-298. doi: 10.3321/j.issn:1000-3290.2001.02.019
引用本文: 张晓青, 夏钟福, 张冶文, G.M.Sessler. 2001: Si基Si3N4/SiO2双层膜驻极体的电荷储存与输运, 物理学报, 50(2): 293-298. doi: 10.3321/j.issn:1000-3290.2001.02.019
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ZHANG XIAO-QING, XIA Zhong-fu, ZHANG Ye-wen, G.M.Sessler. 2001: CHARGE STORAGE AND TRANSPORTATION IN DOUBLE LAYERS OF Si3N4/SiO2 ELECTRET FILM BASED ON Si SUBSTRATE, Acta Physica Sinica, 50(2): 293-298. doi: 10.3321/j.issn:1000-3290.2001.02.019
Citation: ZHANG XIAO-QING, XIA Zhong-fu, ZHANG Ye-wen, G.M.Sessler. 2001: CHARGE STORAGE AND TRANSPORTATION IN DOUBLE LAYERS OF Si3N4/SiO2 ELECTRET FILM BASED ON Si SUBSTRATE, Acta Physica Sinica, 50(2): 293-298. doi: 10.3321/j.issn:1000-3290.2001.02.019
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Si基Si3N4/SiO2双层膜驻极体的电荷储存与输运

  • 同济大学波耳固体物理研究所,

  • 达姆施塔特技术大学电声研究所,

CHARGE STORAGE AND TRANSPORTATION IN DOUBLE LAYERS OF Si3N4/SiO2 ELECTRET FILM BASED ON Si SUBSTRATE

  • 摘要: 利用等温表面电位衰减及热刺激放电(thermally stimulated discharge,TSD)方法探讨了恒栅压电晕充电经常压化学气相沉积(APCVD)的Si基Si3N4和热生长SiO2双层薄膜驻极体电荷的存储特性.结果表明：在常温环境中，300℃高温下，以及95%相对湿度时的60℃条件下，所有试样表现出极好的电荷储存稳定性.对于负电晕充电试样，其电荷输运受慢再捕获效应(slow retrapping effect)控制；用热离子发射模型来描述了正电晕充电Si3N4/SiO2驻极体的正电荷输运特性.
    Abstract: The characteristics of charge storage in APCVD Si3N4/thermal-grown SiO2 double layers electret films, charged by coroma were investigated by measurements of isothermal surface potential decay and thermally stimulated discharge(TSD).The results show that all of the samples have high charge stability at room temperature, at 300 and 60℃ under 95% of the relative humidity. The transport of the trapped charges due to external excitation for the negatively charged samples is basically controlled by the slow retrapping effect. However, the transport of detrapped positive charges due to external excitation can be described by a model of thermal ion emission.
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  • 刊出日期:  2001-02-28

Si基Si3N4/SiO2双层膜驻极体的电荷储存与输运

  • 同济大学波耳固体物理研究所,
  • 达姆施塔特技术大学电声研究所,

摘要: 利用等温表面电位衰减及热刺激放电(thermally stimulated discharge,TSD)方法探讨了恒栅压电晕充电经常压化学气相沉积(APCVD)的Si基Si3N4和热生长SiO2双层薄膜驻极体电荷的存储特性.结果表明：在常温环境中，300℃高温下，以及95%相对湿度时的60℃条件下，所有试样表现出极好的电荷储存稳定性.对于负电晕充电试样，其电荷输运受慢再捕获效应(slow retrapping effect)控制；用热离子发射模型来描述了正电晕充电Si3N4/SiO2驻极体的正电荷输运特性.

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