H2对Ar稀释SiH4等离子体CVD制备多晶硅薄膜的影响

祁菁; 金晶; 胡海龙; 高平奇; 袁保和; 贺德衍

doi:10.3321/j.issn:1000-3290.2006.11.063

物理学报

H2对Ar稀释SiH4等离子体CVD制备多晶硅薄膜的影响

, , , , ,

祁菁, 金晶, 胡海龙, 高平奇, 袁保和, 贺德衍. 2006: H2对Ar稀释SiH4等离子体CVD制备多晶硅薄膜的影响, 物理学报, 55(11): 5959-5963. doi: 10.3321/j.issn:1000-3290.2006.11.063

引用本文:

Qi Jing, Jin Jing, Hu Hai-Long, Gao Ping-Qi, Yuan Bao-He, He De-Yan. 2006: Effect of H2 on polycrystalline Si films deposited by plasma-enhanced CVD using Ar-diluted SiH4, Acta Physica Sinica, 55(11): 5959-5963. doi: 10.3321/j.issn:1000-3290.2006.11.063

Citation:

Qi Jing, Jin Jing, Hu Hai-Long, Gao Ping-Qi, Yuan Bao-He, He De-Yan. 2006: Effect of H2 on polycrystalline Si films deposited by plasma-enhanced CVD using Ar-diluted SiH4, Acta Physica Sinica, 55(11): 5959-5963. doi: 10.3321/j.issn:1000-3290.2006.11.063

H2对Ar稀释SiH4等离子体CVD制备多晶硅薄膜的影响

兰州大学物理系,兰州,730000

Effect of H2 on polycrystalline Si films deposited by plasma-enhanced CVD using Ar-diluted SiH4

摘要: 以SiH4,Ar和H2为反应气体,采用射频等离子体化学气相沉积方法在300℃下制备了低温多晶Si薄膜.实验发现,反应气体中H2的比例是影响薄膜结晶质量的重要因素,在适量的H2比例下制备的多晶Si薄膜具有结晶相体积分数高,氢含量低,生长速率快、抗杂质污染等特性.
- 低温多晶Si薄膜 /
- 等离子体CVD /
- Ar稀释SiH4 /
- H2比例