高氧空位简并锐钛矿TiO2半导体电子寿命的第一性原理研究
First principle study on the electron life span of degenerate anatase phase TiO2 semi-conductor with high concentration of oxygen vacancies
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引用本文: | 侯清玉, 张跃, 张涛. 2008: 高氧空位简并锐钛矿TiO2半导体电子寿命的第一性原理研究, 物理学报, 57(5): 3155-3159. doi: 10.3321/j.issn:1000-3290.2008.05.084 |
Citation: | Hou Qing-Yu, Zhang Yue, Zhang Tao. 2008: First principle study on the electron life span of degenerate anatase phase TiO2 semi-conductor with high concentration of oxygen vacancies, Acta Physica Sinica, 57(5): 3155-3159. doi: 10.3321/j.issn:1000-3290.2008.05.084 |