利用金属有机物化学气相沉积技术生长的a面GaN表面形貌和位错的研究

崔影超; 谢自力; 赵红; 梅琴; 李弋; 刘斌; 宋黎红; 张荣; 郑有蚪

doi:10.3321/j.issn:1000-3290.2009.12.060

物理学报

利用金属有机物化学气相沉积技术生长的a面GaN表面形貌和位错的研究

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崔影超, 谢自力, 赵红, 梅琴, 李弋, 刘斌, 宋黎红, 张荣, 郑有蚪. 2009: 利用金属有机物化学气相沉积技术生长的a面GaN表面形貌和位错的研究, 物理学报, 58(12): 8506-8510. doi: 10.3321/j.issn:1000-3290.2009.12.060

引用本文:

Cui Ying-Chao, Xie Zi-Li, Zhao Hong, Mei Qin, Li Yi, Liu Bin, Song Li-Hong, Zhang Rong, Zheng You-Dou. 2009: Morphology and defect of a-GaN grown by metal orgamic chemical vapor deposition, Acta Physica Sinica, 58(12): 8506-8510. doi: 10.3321/j.issn:1000-3290.2009.12.060

Citation:

Cui Ying-Chao, Xie Zi-Li, Zhao Hong, Mei Qin, Li Yi, Liu Bin, Song Li-Hong, Zhang Rong, Zheng You-Dou. 2009: Morphology and defect of a-GaN grown by metal orgamic chemical vapor deposition, Acta Physica Sinica, 58(12): 8506-8510. doi: 10.3321/j.issn:1000-3290.2009.12.060

利用金属有机物化学气相沉积技术生长的a面GaN表面形貌和位错的研究

南京大学物理系,微结构国家实验室,江苏省光电信息功能材料重点实验室,南京,210093

Morphology and defect of a-GaN grown by metal orgamic chemical vapor deposition

摘要: 采用金属有机物化学气相沉积技术在r面蓝宝石衬底上制备了a面GaN薄膜,用熔融的KOH在400℃对样品分别腐蚀1.0,1.5和2.0 min.用扫描电镜、原子力显微镜、X射线衍射谱和阴极射线荧光对腐蚀前后的表面形貌进行分析.研究表明,400℃下腐蚀1.5 min后出现了长平行四边形的条纹状,这是由于无极化的a面GaN表面极性各向异性,c向与m向上N原子悬挂键密度不同,同时稳定性不同,对OH~-离子的吸附能力不同造成的,其中沿c方向易于腐蚀.同时,a面GaN腐蚀后出现了六角突起.我们认为这与穿透位错有关,而其形貌则与GaN薄膜的位错局部极性有关.
- a面GaN /
- 堆垛层错 /
- 极性
Abstract: On the substrate of r-sapphires a-GaN films grown by metal orgamic chemical vapor deposition was etched in molten KOH NaOH for 1.0, 1.5 and 2.0 min. Scanning electron microscope, atomic force microscope, X-ray diffraction and cathodoluminescence was used to study its morphology and defect. We find that etching for 1.5 min at the temperature of 400℃ is appropriate for a-GaN on sapphires substrate. Different from c-GaN which show hexagonal pits, a-GaN shows parallelogram strips. In the direction of c axis it is easier to be etched. That is because the polarity of a-GaN films is anisotropic which leads to different absorption capacities of OH ions in different directions. We also find hexagonal protuberance on the surface which is associated with threading dislocations.

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利用金属有机物化学气相沉积技术生长的a面GaN表面形貌和位错的研究

南京大学物理系,微结构国家实验室,江苏省光电信息功能材料重点实验室,南京,210093

关键词:

a面GaN /
堆垛层错 /
极性

摘要: 采用金属有机物化学气相沉积技术在r面蓝宝石衬底上制备了a面GaN薄膜,用熔融的KOH在400℃对样品分别腐蚀1.0,1.5和2.0 min.用扫描电镜、原子力显微镜、X射线衍射谱和阴极射线荧光对腐蚀前后的表面形貌进行分析.研究表明,400℃下腐蚀1.5 min后出现了长平行四边形的条纹状,这是由于无极化的a面GaN表面极性各向异性,c向与m向上N原子悬挂键密度不同,同时稳定性不同,对OH~-离子的吸附能力不同造成的,其中沿c方向易于腐蚀.同时,a面GaN腐蚀后出现了六角突起.我们认为这与穿透位错有关,而其形貌则与GaN薄膜的位错局部极性有关.

English Abstract

Morphology and defect of a-GaN grown by metal orgamic chemical vapor deposition

南京大学物理系,微结构国家实验室,江苏省光电信息功能材料重点实验室,南京,210093

Keywords:

a面GaN /
堆垛层错 /
极性

Abstract: On the substrate of r-sapphires a-GaN films grown by metal orgamic chemical vapor deposition was etched in molten KOH NaOH for 1.0, 1.5 and 2.0 min. Scanning electron microscope, atomic force microscope, X-ray diffraction and cathodoluminescence was used to study its morphology and defect. We find that etching for 1.5 min at the temperature of 400℃ is appropriate for a-GaN on sapphires substrate. Different from c-GaN which show hexagonal pits, a-GaN shows parallelogram strips. In the direction of c axis it is easier to be etched. That is because the polarity of a-GaN films is anisotropic which leads to different absorption capacities of OH ions in different directions. We also find hexagonal protuberance on the surface which is associated with threading dislocations.

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利用金属有机物化学气相沉积技术生长的a面GaN表面形貌和位错的研究

Morphology and defect of a-GaN grown by metal orgamic chemical vapor deposition

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利用金属有机物化学气相沉积技术生长的a面GaN表面形貌和位错的研究

English Abstract

Morphology and defect of a-GaN grown by metal orgamic chemical vapor deposition

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