摘要:
Ge1?xSnx是一种新型IV族合金材料,在光子学和微电子学器件研制中具有重要应用前景.本文使用低温分子束外延(MBE)法,在Ge(001)衬底上生长高质量的Ge1?xSnx合金,组分x分别为1.5%,2.4%,2.8%,5.3%和14%,采用高分辨X射线衍射(HR-XRD)、卢瑟福背散射谱(RBS)和透射电子显微镜(TEM)等方法表征Ge1?xSnx合金的材料质量.对于低Sn组分(x 5.3%)的样品, Ge1?xSnx合金的晶体质量非常好, RBS的沟道/随机产额比(χmin)只有5.0%, HR-XRD曲线中Ge1?xSnx衍射峰的半高全宽(FWHM)仅100′左右.对于x=14%的样品, Ge1?xSnx合金的晶体质量相对差一些, FWHM=264.6′.
Abstract:
As a new group–IV semiconductor alloy, Ge1?xSnx is a very promising material for applications in photonic and microelectronic devices. In this work, high-quality germanium-tin (Ge1?xSnx) alloys are grown on Ge(001) substrates by molecular beam epitaxy, with x=1.5%, 2.4%, 2.8%, 5.3%, and 14%. The Ge1?xSnx alloys are characterized by high resolution X-ray diffraction (HR-XRD), Rutherford backscattering spectra (RBS), and transmission electron micrograph (TEM). For the samples with Sn composition x 5.3%, the Ge1?xSnx alloys each exhibit a very high crystalline quality. The ratio of channel yield to random yield (χmin) in the RBS spectrum is only about 5%, and the full width at half maximum (FWHM) of the Ge1?xSnx peak in HR-XRD curve is 100′. For the sample with x=14%, the crystalline quality of the alloy is degraded and FWHM is 264.6′.
首页
登录
注册
下载: