摘要:
逾渗网格模型是当前忆阻器件机理分析研究领域的热点之一,但现有模型缺乏对初态设定的讨论.本文对逾渗网格模型进行了简化,并基于此,通过电压激励步进的方式,研究了不同初态对单极性忆阻开关元件中逾渗导电通道形成的影响,分析了形成通道的动态过程以及相应的物理意义,验证了忆阻开关元件高低阻态的阻值实际表现为高斯分布而非理想双值稳态;而不同初态条件下,忆阻开关元件导电通道的形状存在着不同的“树形”结构,进而影响着其阻值的分布.研究成果有助于进一步揭示忆阻器尚未明确的导电机理,为今后对具体不同类型的忆阻元件的初态分析提供指导性作用.
Abstract:
Due to its fitting the resistive switching behavior of memristor well, the percolation network model has recently attracted attention in the memristive mechanism field. However, the current 2D percolation network model lacks the pristine states analysis. In this paper, the original model is simplified to study the effects of pristine state on the forming process of conductive percolation channel with the increase of applied voltage. Intuitively, such a percolation network model not only demonstrates the dynamic process of local conducting channels formed in the physical meaning, which verifies that the resistance distribution of the memristor switching is not ideally bistable but can be fitted by Gauss curve;also it contributes to deciphering the unknown conductive mechanisms of memristor with the various types of percolation channel.
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