摘要:
本文利用化学气相反应(CVR)法,系统研究了不同温度对Ce掺杂的SiC纳米线及其场发射性能的影响规律.利用扫描电镜(SEM)、透射电镜(TEM)、选区电子衍射(SAED)、X射线衍射(XRD)对所得产物进行了表征,并对其场发射性能进行了测试.结果表明:所得产物为具有立方结构的β-SiC晶体,随着温度的升高,纳米线逐渐变的弯曲, Ce的含量降低,产物的开启电场和阈值电场先升高后降低.当合成温度为1250?C, Ce的含量为0.27 at%,产物的场发射性能最佳,开启电场和阈值电场分别为2.5 V/μm和5.2 V/μm.
Abstract:
In this paper, Ce doped-SiC nanowires were prepared by chemical vapor reaction technique at the different synthesis tempera-tures, and the field emission (FE) properties of the nanowires were measured. The products were characterized by scanning electron microscope (SEM), transmission electron microscope (TEM), selected area electron diffraction (SAED) and X-ray diffraction (XRD). The results suggested that the products wereβ-SiC, the nanowires become bending and the content of Ce reduces with increasing temperature;the values of the turn-on and threshold field increase at first and then decrease. When the synthesis temperature is 1250?C, the content of Ce is 0.27 at%, the turn-on and threshold fields of the product are 2.5 V/μm and 5.2 V/μm.
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