等离子增强原子层沉积低温生长AlN薄膜*

冯嘉恒; 唐立丹?; 刘邦武; 夏洋; 王冰

doi:10.7498/aps.62.117302

辽宁工业大学,材料科学与工程,锦州 121001

中国科学院微电子器件与集成技术重点实验室,北京 100029

Low-temperature growth of AlN thin films by plasma-enhanced atomic layer deposition*

摘要: 采用等离子增强原子层沉积技术在单晶硅基体上成功制备了AlN晶态薄膜,利用椭圆偏振仪、原子力显微镜、小角掠射X射线衍射仪、高分辨透射电子显微镜、X射线光电子能谱仪对样品的生长速率、表面形貌、晶体结构、薄膜成分进行了表征和分析,结果表明,采用等离子增强原子层沉积制备AlN晶态薄膜的最低温度为200?C,薄膜表面平整光滑,具有六方纤锌矿结构与(100)择优取向, Al2p与N1S的特征峰分别为74.1 eV与397.0 eV,薄膜中Al元素与N元素以Al-N键相结合,且成分均匀性良好.

关键词:

Abstract: The crystalline AlN thin film was fabricated on Si(100) substrates by plasma-enhanced atomic layer deposition. Its growth rate was illustrated by spectroscopic ellipsometer. And the surface morphology, crystal structure and composition were characterized by atomic force microscopy, X-ray diffraction, high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. Results show that the lowest temperature for deposition of the crystalline AlN thin film is 200 ?C, and the film coverage on the substrate surface is continuous and homogeneous. The film prepared with a homogeneous concentration distribution is polycrystalline with a hexagonal wurtzite structure. High resolution Al2p and N1s spectra confirm the presence of AlN with peaks located at 74.1 eV and 397.0 eV, respectively.

等离子增强原子层沉积低温生长AlN薄膜*

辽宁工业大学,材料科学与工程,锦州 121001

中国科学院微电子器件与集成技术重点实验室,北京 100029

关键词:

Low-temperature growth of AlN thin films by plasma-enhanced atomic layer deposition*

辽宁工业大学,材料科学与工程,锦州 121001

中国科学院微电子器件与集成技术重点实验室,北京 100029

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