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空间用 GaInP/GaAs/In0.3Ga0.7 As（1 eV）倒装三结太阳电池研制*

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张永, 单智发, 蔡建九, 吴洪清, 李俊承, 陈凯轩, 林志伟, 王向武. 2013: 空间用 GaInP/GaAs/In0.3Ga0.7 As（1 eV）倒装三结太阳电池研制*, 物理学报, null(15): 158802. doi: 10.7498/aps.62.158802
引用本文: 张永, 单智发, 蔡建九, 吴洪清, 李俊承, 陈凯轩, 林志伟, 王向武. 2013: 空间用 GaInP/GaAs/In0.3Ga0.7 As（1 eV）倒装三结太阳电池研制*, 物理学报, null(15): 158802. doi: 10.7498/aps.62.158802
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Zhang Yong, Shan Zhi-Fa, Cai Jian-Jiu, Wu Hong-Qing, Li Jun-Cheng, Chen Kai-Xuan, Lin Zhi-Wei, Wang Xiang-Wu. 2013: Investigation of inverted metamorphic GaInP/GaAs/In0.3Ga0.7As (1 eV) triple junction solar cells for space applications*, Acta Physica Sinica, null(15): 158802. doi: 10.7498/aps.62.158802
Citation: Zhang Yong, Shan Zhi-Fa, Cai Jian-Jiu, Wu Hong-Qing, Li Jun-Cheng, Chen Kai-Xuan, Lin Zhi-Wei, Wang Xiang-Wu. 2013: Investigation of inverted metamorphic GaInP/GaAs/In0.3Ga0.7As (1 eV) triple junction solar cells for space applications*, Acta Physica Sinica, null(15): 158802. doi: 10.7498/aps.62.158802
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空间用 GaInP/GaAs/In0.3Ga0.7 As（1 eV）倒装三结太阳电池研制*

  • 厦门乾照光电股份有限公司,厦门,361101

Investigation of inverted metamorphic GaInP/GaAs/In0.3Ga0.7As (1 eV) triple junction solar cells for space applications*

  • 摘要: 　　采用阶变缓冲层技术(step-graded)外延生长了具有更优带隙组合的倒装 GaInP/GaAs/In0.3Ga0.7As(1.0 eV)三结太阳电池材料, TEM 和 HRXRD 测试表明晶格失配度为2%的 In0.3Ga0.7As 底电池具有较低的穿透位错密度和较高的晶体质量,达到太阳电池的制备要求.通过键合、剥离等工艺制备了太阳电池芯片.面积为10.922 cm2的太阳电池芯片在空间光谱条件下转换效率达到32.64%(AM0,25?C),比传统晶格匹配的 GaInP/GaAs/Ge(0.67 eV)三结太阳电池的转换效率提高3个百分点.
    Abstract: High efficiency inverted metamorphic (IMM) GaInP/GaAs/In0.3Ga0.7As(1.0 eV) triple-junction solar cells have been fabricated by growing In0.3Ga0.7As(1.0 eV) sub-cell using step-graded buffer layer, which is 2% lattice mismatch to the GaAs middle cell. The high crystalline quality and low threading dislocation density are confirmed by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). The quantum efficiency and I-V characteristic are measured for the IMM GaInP/GaAs/In0.3Ga0.7As solar cells, as well as for the conventional triple-junction solar cell based on Ge substrate (GaInP/GaAs/Ge). The efficiency of the designed cell with an area of 10.922 cm2 is 32.64% (AM0, 25 ?C), which is 3% higher than the conventional GaInP/GaAs/Ge triple junction solar cell.
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  • 刊出日期:  2013-08-15

空间用 GaInP/GaAs/In0.3Ga0.7 As（1 eV）倒装三结太阳电池研制*

  • 厦门乾照光电股份有限公司,厦门,361101

摘要: 　　采用阶变缓冲层技术(step-graded)外延生长了具有更优带隙组合的倒装 GaInP/GaAs/In0.3Ga0.7As(1.0 eV)三结太阳电池材料, TEM 和 HRXRD 测试表明晶格失配度为2%的 In0.3Ga0.7As 底电池具有较低的穿透位错密度和较高的晶体质量,达到太阳电池的制备要求.通过键合、剥离等工艺制备了太阳电池芯片.面积为10.922 cm2的太阳电池芯片在空间光谱条件下转换效率达到32.64%(AM0,25?C),比传统晶格匹配的 GaInP/GaAs/Ge(0.67 eV)三结太阳电池的转换效率提高3个百分点.

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