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基于两端自发荧光辐射的808nm半导体激光器增益偏振特性实验表征和能带分析*

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马明磊, 吴坚, 杨沐, 宁永强, 商广义. 2013: 基于两端自发荧光辐射的808nm半导体激光器增益偏振特性实验表征和能带分析*, 物理学报, null(17): 265-270. doi: 10.7498/aps.62.174209
引用本文: 马明磊, 吴坚, 杨沐, 宁永强, 商广义. 2013: 基于两端自发荧光辐射的808nm半导体激光器增益偏振特性实验表征和能带分析*, 物理学报, null(17): 265-270. doi: 10.7498/aps.62.174209
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Ma Ming-Lei, Wu Jian, Yang Mu, Ning Yong-Qiang, Shang Guang-Yi. 2013: Experimental characterization of polarization gain properties of 808 nm semiconductor laser and analysis of energy band based on amplified spontaneous emissions from double facets, Acta Physica Sinica, null(17): 265-270. doi: 10.7498/aps.62.174209
Citation: Ma Ming-Lei, Wu Jian, Yang Mu, Ning Yong-Qiang, Shang Guang-Yi. 2013: Experimental characterization of polarization gain properties of 808 nm semiconductor laser and analysis of energy band based on amplified spontaneous emissions from double facets, Acta Physica Sinica, null(17): 265-270. doi: 10.7498/aps.62.174209
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基于两端自发荧光辐射的808nm半导体激光器增益偏振特性实验表征和能带分析*

  • 北京航空航天大学应用物理系,北京,100191

  • 发光学与应用国家重点实验室，中国科学院长春光学精密机械与物理研究所，长春 130033

Experimental characterization of polarization gain properties of 808 nm semiconductor laser and analysis of energy band based on amplified spontaneous emissions from double facets

  • 摘要: 通过半导体激光器两端的放大自发荧光辐射可以获取器件的光学增益信息。本文利用这一新的增益实验测量方法，开展了对连续运行的808 nm GaAs/AlGaAs量子阱激光器横向电场(TE)与磁场(TM)偏振增益特性的实验研究。通过将实验结果与理论增益曲线对比，分析了非应变GaAs量子阱TE和TM极化偏振对应的空穴子能带随注入电流的变化规律，以及激光器在连续运行状态下的实际增益状态和影响因素。
    Abstract: The information of optical gain of semiconductor lasers can be obtained through the amplified spontaneous emission from double facets. By utilizing this new approach, an experimental research about polarization (TE and TM) gain characteristics of continuously-operated 808 nm GaAs/AlGaAs quantum well laser is introduced in this paper. Through the measured gain spectra which are compared with the theoretical gain curves, we analyze the variations of hole subband corresponding to the polarizations along with the change of injection current, meanwhile the actual status of gain spectra and influential factors of the continuously-operated laser are discussed as well.
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  • 刊出日期:  2013-09-15

基于两端自发荧光辐射的808nm半导体激光器增益偏振特性实验表征和能带分析*

  • 北京航空航天大学应用物理系,北京,100191
  • 发光学与应用国家重点实验室，中国科学院长春光学精密机械与物理研究所，长春 130033

摘要: 通过半导体激光器两端的放大自发荧光辐射可以获取器件的光学增益信息。本文利用这一新的增益实验测量方法，开展了对连续运行的808 nm GaAs/AlGaAs量子阱激光器横向电场(TE)与磁场(TM)偏振增益特性的实验研究。通过将实验结果与理论增益曲线对比，分析了非应变GaAs量子阱TE和TM极化偏振对应的空穴子能带随注入电流的变化规律，以及激光器在连续运行状态下的实际增益状态和影响因素。

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