首页
登录
注册
累积辐照影响静态随机存储器单粒子翻转敏感性的仿真研究
Simulation study of the influence of ionizing irradiation on the single event upset vulnerability of static random access memory
-
摘要: 基于解析分析对比了大尺寸与深亚微米尺度下静态随机存取存储器(static random access memory, SRAM)单元单粒子翻转敏感性的表征值及引入累积辐照后的变化趋势.同时借助仿真模拟计算了0.18μm工艺对应的六管SRAM单元在对应不同累积剂量情况下,离子分别入射不同中心单管时的电学响应变化,计算结果与解析分析所得推论相一致,即只有当累积辐照阶段与单粒子作用阶段存储相反数值时, SRAM单元的单粒子翻转敏感性才会增强.Abstract: Single event upset vulnerabilities of static random access memory (SRAM) cells on the micron scale and deep sub-micron scale are characterized and analyzed under ionizing irradiation. Meanwhile, by means of three-dimentional simulation, electrical responses of 6-T SRAM cell with feature size 0.18 μm are calculated when ions are injected into the different central single transistors under the irradiotion with different deposited doses. The simulation results are consistent with the analysis conclusion: the single event upset vulnerability would increase only when the SRAM cell stores the same state as the one stored in the irradiation period.
-
-
计量
- 文章访问数: 243
- HTML全文浏览数: 55
- PDF下载数: 0
- 施引文献: 0
下载: