摘要:
本文提出了一种基于U形波导耦合单微环结构的新型SOI(绝缘体上硅)温度传感器.温度变化引起感温部位有效折射率和长度变化,导致传感器的输出光谱发生漂移.根据传输矩阵法和耦合模理论,设计了新型传感器模型,并且分析了感温部位不同时系统输出光谱特性.结果表明：当U形波导耦合单微环整体结构感温时,输出光谱无伪模,消光比达到31 dB,可作为最佳感温元件.相比于传统的双直波导耦合单微环结构,当U形波导的两个耦合点间的距离为微环周长的整数倍数时, FSR(自由光谱范围)可加倍至56 nm,灵敏度提高到89.2 pm/?C,测量范围为298-720 K,实现了SOI微环谐振器的高温测量.
Abstract:
A novel SOI (silicon on insulator) temperature sensor based on a U-shaped waveguide-coupled single micro-ring is proposed in this paper. Refractive index and length of the temperature-sensing part will change as the temperature changes, leading to the shift of the output spectrum of the sensor. The transfer function of the U-shaped waveguide coupled with a single micro-ring is obtained based on the theory of coupling modes and transfer matrix method. And we have studied the output spectrum properties of the system from different temperature-sensing parts. Results show that the whole structure of U-shaped waveguide coupled with the single micro-ring proves to be the best temperature-sensing part as the output spectrum with no spurious modes and a deep extinction ratio of 31 dB. Compared with the traditional two waveguides coupled with a single micro-ring resonator, when the distance between the two coupling points of the U-shaped waveguide is an integer multiple of circumference of the micro-ring, the free spectrum range (FSR) can be expanded to 56 nm, the sensitivity can achieve 89.2 pm/?C, and the measurement range be 298-720 K, achieving a high temperature measurement of SOI micro-ring resonator.
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