嵌入Ag纳米颗粒层的DNA忆阻器?

王媛; 董瑞新; 闫循领

doi:10.7498/aps.64.048402

嵌入Ag纳米颗粒层的DNA忆阻器?

聊城大学物理科学与信息工程学院，山东省光通信和科学技术重点实验室，聊城 252059

Organic memristive devices based on DNA emb edded in silver nanoparticles layer

摘要: 构建了具有“Al/DNA-CTMAB/Ag NPs/DNA-CTMAB/ITO”结构的有机忆阻器件，并对其电流-电压(I-V )曲线进行测量.结果表明，嵌入Ag纳米颗粒层，不仅可以增强器件的导电性，而且忆阻特性也显著提高.当颗粒粒径在15—20 nm范围时，开-关电流比ION/IOFF能够达到103.器件的I-V 特性受扫描电压幅值VA的影响，随着VA的增大，高阻态的电流变化较小，而低阻态的电流明显增大，开(或关)电压VSET (VRESET)和ION/IOFF增加.实验还发现，器件高低阻状态的相互转换取决于外加电场的方向，说明该忆阻器具有极性.

关键词:

Abstract: Two-terminal electrical bistable device is fabricated with structure “Al/deoxyribonucleic acid-cetyltrimethylam-monium bromide/silver nanoparticles/deoxyribonucleic acid-cetyltrimethylammonium bromide/indium tin oxide”, and I-V curves are measured. The results show that the conductivity and the memristive characteristics are significantly improved by the embedding Ag nanoparticles layer. The optimal particle diameters are in a range of 15?20 nm, and the maximum on/off current ratio can reach 103. It is also found that I-V characteristic of the device depends on the sweeping voltage amplitude VA. As VA increases, switching voltages (VSET, VRESET) and the on/off current ratio ION/IOFF increase. Furthermore, the transition between high-and low-resistance-state depends on the direction of the applied electric field, which shows that the device possesses polarity.

嵌入Ag纳米颗粒层的DNA忆阻器?

聊城大学物理科学与信息工程学院，山东省光通信和科学技术重点实验室，聊城 252059

关键词:

Organic memristive devices based on DNA emb edded in silver nanoparticles layer

聊城大学物理科学与信息工程学院，山东省光通信和科学技术重点实验室，聊城 252059

Keywords:

全文HTML

参考文献 (0)