高级搜索

包埋Pt纳米粒子对金属-半导体-金属结构ZnO紫外光电探测器性能的影响?

,  ,  ,  ,  ,  ,  ,  ,  ,  , 

downloadPDF

上一篇

下一篇

裴佳楠, 蒋大勇, 田春光, 郭泽萱, 刘如胜, 孙龙, 秦杰明, 侯建华, 赵建勋, 梁庆成, 高尚. 2015: 包埋Pt纳米粒子对金属-半导体-金属结构ZnO紫外光电探测器性能的影响?, 物理学报, null(6): 067802. doi: 10.7498/aps.64.067802
引用本文: 裴佳楠, 蒋大勇, 田春光, 郭泽萱, 刘如胜, 孙龙, 秦杰明, 侯建华, 赵建勋, 梁庆成, 高尚. 2015: 包埋Pt纳米粒子对金属-半导体-金属结构ZnO紫外光电探测器性能的影响?, 物理学报, null(6): 067802. doi: 10.7498/aps.64.067802
shu
Pei Jia-Nan, Jiang Da-Yong, Tian Chun-Guang, Guo Ze-Xuan, Liu Ru-Sheng, Sun Long Qin, Jie-Ming Hou, Jian-Hua, Zhao Jian-Xun, Liang Qing-Cheng, Gao Shang. 2015: Effect of Pt NPs in the film on the p erformances of ZnO-based metal-semiconductor-metal structured ultraviolet photo detector, Acta Physica Sinica, null(6): 067802. doi: 10.7498/aps.64.067802
Citation: Pei Jia-Nan, Jiang Da-Yong, Tian Chun-Guang, Guo Ze-Xuan, Liu Ru-Sheng, Sun Long Qin, Jie-Ming Hou, Jian-Hua, Zhao Jian-Xun, Liang Qing-Cheng, Gao Shang. 2015: Effect of Pt NPs in the film on the p erformances of ZnO-based metal-semiconductor-metal structured ultraviolet photo detector, Acta Physica Sinica, null(6): 067802. doi: 10.7498/aps.64.067802
shu

包埋Pt纳米粒子对金属-半导体-金属结构ZnO紫外光电探测器性能的影响?

  • 长春理工大学材料科学与工程学院,长春,130022

Effect of Pt NPs in the film on the p erformances of ZnO-based metal-semiconductor-metal structured ultraviolet photo detector

  • 摘要: 利用射频磁控溅射设备制备ZnO薄膜,最终制备ZnO/Pt纳米粒子/ZnO结构的金属-半导体-金属型紫外光电探测器.研究了Pt纳米粒子处在ZnO薄膜层中的不同深度对金属-半导体-金属型紫外光电探测器响应性能的影响.结果表明,探测器的响应度随着Pt纳米粒子在ZnO薄膜层中所处深度的增大而升高.在60 V偏压下,包埋Pt最深的探测器在波长365 nm处取得响应度最大值1.4 A·W?1,包埋有Pt探测器的响应度最大值为无Pt纳米粒子探测器响应度最大值的7倍.结合对ZnO薄膜表面的表征及探测器各项性能的测试,得出包埋Pt纳米粒子增强器件的响应性能可归因于表面等离子体增强散射.
    Abstract: In this paper, by a radio frequency magnetron sputtering equipment, the ZnO/Pt nanoparticles/ZnO thin film struc-ture is fabricated on a SiO2 substrate via three-step. And the metal-semiconductor-metal (MSM) structured ultraviolet (UV) photodetectors are built up. It is studied that the Pt nanoparticles in different depths of the layer of ZnO thin film affect the photoresponse performances of the MSM ultraviolet photodetector. The results show that the responsivity of the detector increases as Pt nanoparticles in ZnO thin film layers augment with the depth increasing. The responsivity of device is measured under 60 V bias, its photoresponse peak is at 365 nm, and the peak photoresponse is 1.4 A·W?1, which is enhanced by 7 times that of the photodetector without Pt NPs. Considering the performance analyses of ZnO films and the photodetectors, it is clear that the excellent performances of the detector with Pt NPs in the film can result from the scattering of Pt NPs.
  • 加载中
  • 加载中
计量
  • 文章访问数:  325
  • HTML全文浏览数:  90
  • PDF下载数:  0
  • 施引文献:  0
出版历程
  • 刊出日期:  2015-03-30

包埋Pt纳米粒子对金属-半导体-金属结构ZnO紫外光电探测器性能的影响?

  • 长春理工大学材料科学与工程学院,长春,130022

摘要: 利用射频磁控溅射设备制备ZnO薄膜,最终制备ZnO/Pt纳米粒子/ZnO结构的金属-半导体-金属型紫外光电探测器.研究了Pt纳米粒子处在ZnO薄膜层中的不同深度对金属-半导体-金属型紫外光电探测器响应性能的影响.结果表明,探测器的响应度随着Pt纳米粒子在ZnO薄膜层中所处深度的增大而升高.在60 V偏压下,包埋Pt最深的探测器在波长365 nm处取得响应度最大值1.4 A·W?1,包埋有Pt探测器的响应度最大值为无Pt纳米粒子探测器响应度最大值的7倍.结合对ZnO薄膜表面的表征及探测器各项性能的测试,得出包埋Pt纳米粒子增强器件的响应性能可归因于表面等离子体增强散射.

English Abstract

    全文HTML

参考文献 (0)

目录

/

返回文章
返回