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电子辐照下GaAs/Ge太阳电池载流子输运机理研究?
Carrier transp ort mechanism of GaAs/Ge solar cells under electrons irradiation
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摘要: 通过地面模拟辐照试验获得不同能量电子辐照下GaAs/Ge太阳电池电学参数退化的基本规律，在此基础上使用PC1 D模拟程序分析太阳电池内部的载流子输运机理，建立不同能量的电子辐照下GaAs/Ge太阳电池中多数载流子浓度和少数载流子扩散长度随辐照粒子注量变化的基本规律。研究结果表明：多数载流子浓度和少数载流子扩散长度均随入射电子注量的增大而减小，多数载流子去除率和少数载流子扩散长度损伤系数均随电子能量的增高而增大，多数载流子去除效应和少数载流子扩散长度缩短分别是电池开路电压和短路电流退化的主要原因。Abstract: In this paper, the basic laws of spectral response, open-circuit voltage and short circuit current of GaAs/Ge solar cells are obtained by ground simulation irradiation test under the different-energy electron irradiation, such as 1, 1.8 and 10 MeV. The carrier transport mechanism in cells is analyzed using the PC1 D simulation program. The variations of the majority carrier concentration and the minority carrier diffusion length with the irradiation particle fluence are obtained in GaAs/Ge solar cells under different-energy electron irradiation. Majority carrier removal rate and minority carrier diffusion length damage coe?cient are calculated under different-energy electron irradiation. The results show that majority carrier concentration and minority carrier diffusion length decrease with increasing the incident electron fluence. The majority carrier removal rate and the damage coe?cient of minority carrier diffusion length increase with increasing the electrons energy. The majority carrier removal effect and the minority carrier diffusion length shortened are the main reasons of open-circuit voltage and short circuit current degradation of the solar cells, respectively.
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