摘要:
Mo掺杂ZnO的吸收光谱红移和蓝移两种相互冲突的实验结果均有报道,但是仍然没有合理解释.为了解决该问题,本文采用基于密度泛函理论的广义梯度近似平面波超软赝势+U方法,用第一性原理分析了Zn0.9583Mo0.0417O,Zn0.9375Mo0.0625O,Zn14Mo2O的能带结构、态密度和吸收光谱分布.结果表明,Mo掺杂量为2.08 at%—3.13 at%的范围内,随着掺杂量的增加,体系的体积逐渐增大,形成能逐渐升高,稳定性逐渐下降,掺杂逐渐困难.与此同时,所有掺杂体系均转化为n型简并半导体.与未掺杂ZnO相比,掺杂体系的带隙均变窄,吸收光谱均发生红移,Mo掺杂量越增加,掺杂体系带隙变窄减弱、吸收光谱红移减弱、电子有效质量越减小、电子浓度越减小、电子迁移率越减小、电子电导率越减小.同时,磁矩减小,掺杂体系的居里温度能达到室温以上.
Abstract:
The experimental results of red-shift and blue-shift in absorption spectrum of Mo-doped ZnO are in mutual contradiction, and this phenomenon has not been explained rationally so far. For explaining this phenomenon, we analyze the energy band structure, state density, and absorption-spectrum distributions for each of Zn0.9583Mo0.0417O, Zn0.9375Mo0.0625O and Zn14Mo2O by first-principles calculation. The results show that within a limited doping amount range of 2.08 at%–3.13 at%, the higher Mo doping amount results in higher doping system volume, higher formation energy, lower system stability, and more difficult to dope. Meanwhile, all doping systems are converted into n-type degenerate semiconductors. Compared with the band gap of pure ZnO, the band gap of each doping system becomes narrow and the absorption spectrum shows red-shift. The higher the Mo doping amount, the weaker the narrowing of band gap becomes and the weaker the red-shift in absorption spectrum as well as the lower the electronic effective mass and the lower the electronic concentration;the lower the electronic mobility, the lower the electronic conductivity is;the lower the electronic magnetic moment is. The Curie temperature of doping system can reach a temperature higher than room temperature.
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