电荷自旋注入机制分离的新型稀磁半导体*

邓正; 赵侃; 靳常青

doi:10.7693/wl20131001

物理

电荷自旋注入机制分离的新型稀磁半导体*

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邓正, 赵侃, 靳常青. 2013: 电荷自旋注入机制分离的新型稀磁半导体*, 物理, null(10): 682-688. doi: 10.7693/wl20131001

引用本文:

邓正, 赵侃, 靳常青. 2013: 电荷自旋注入机制分离的新型稀磁半导体*, 物理, null(10): 682-688. doi: 10.7693/wl20131001

DENG Zheng, ZHAO Kan, JIN Chang-Qing. 2013: New types of diluted magnetic semiconductors with decoupled charge and spin doping, Physics, null(10): 682-688. doi: 10.7693/wl20131001

Citation:

DENG Zheng, ZHAO Kan, JIN Chang-Qing. 2013: New types of diluted magnetic semiconductors with decoupled charge and spin doping, Physics, null(10): 682-688. doi: 10.7693/wl20131001

电荷自旋注入机制分离的新型稀磁半导体*

中国科学院物理研究所极端条件物理重点实验室北京 100190

New types of diluted magnetic semiconductors with decoupled charge and spin doping

摘要: 兼具电荷属性和自旋特性的稀磁半导体将有可能突破Moore定律的瓶颈。文章介绍了作者实验室近年来发现和研究的电荷自旋注入机制分离的新型稀磁半导体，目前这类新型稀磁半导体的铁磁转变温度可以与(Ga, Mn)As相比拟，并有望进一步实现室温铁磁。
- 稀磁半导体 /
- 电荷自旋注入分离
Abstract: Diluted magnetic semiconductors (DMSs) that combine both charge and spin quantum freedom are promising for developing new generation information technologies. We report our recent work on new types of DMSs with decoupled charge and spin doping. Their highest Curie temperature in the bulk form is comparable to that of typical (Ga, Mn)As, making room-temperature ferromagnetism within reach.