SOI纳米线波导导光机理的物理分析

物理

SOI纳米线波导导光机理的物理分析

, , , ,

李运涛, 徐学俊, 黄庆忠, 俞育德, 余金中. 2012: SOI纳米线波导导光机理的物理分析, 物理, 41(2): 107-109.

引用本文:

李运涛, 徐学俊, 黄庆忠, 俞育德, 余金中. 2012: SOI纳米线波导导光机理的物理分析, 物理, 41(2): 107-109.

2012: The physics of silicon-on-insulator nanowire waveguides, Physics, 41(2): 107-109.

Citation:

2012: The physics of silicon-on-insulator nanowire waveguides, Physics, 41(2): 107-109.

The physics of silicon-on-insulator nanowire waveguides

摘要: SOI（silicon-on-insulator）纳米线波导及其器件是近年来光电子学领域研究的重点内容之一．文章从基本的导波光学理论出发，引入古斯一汉森位移理论，对SOI纳米线波导导光的物理机制进行了分析并给出了物理解释和模拟结果．
- 绝缘体上的硅 /
- 纳米线波导 /
- 古斯-汉森位移
Abstract: Nanowire waveguides and devices have become a key point of optoelectronics in recent years. In this paper, the physics of silion-on-insulator nanowire waveguides is analyzed and explained based on the Goos--Hanchen displacement theory. Simulation results are also presented.