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高功率脉冲磁控溅射研究进展
Research Progress on High Power Pulsed Magnetron Sputtering
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摘要: 高功率脉冲磁控溅射(High-power impulse magnetron sputtering，HiPIMS)是一种峰值功率极高，靶材原子高度离化的离化物理气相沉积技术。HiPIMS电源高压脉冲输出到磁控靶的脉冲功率密度可达103 kW/cm2；施加在溅射靶上的负电压只有在达到或超过“雪崩式”放电机制的阈值电压时才能获得百安级的靶电流峰值；在瞬时高压脉冲的作用下，靠近靶表面的离化区域等离子体密度可以达到1018～1019 m?3，试验测得Cu等离子体的离化率可达60%～70%；脉宽、频率、波形等脉冲特征对等离子体放电有显著影响，进而影响沉积速率和薄膜性能；相比直流磁控溅射，可以获得更加平滑致密的沉积薄膜，改善膜基结合反应，同时拥有良好的绕镀性；偏压、沉积速率和气压等会对HiPIMS的沉积过程产生影响，进而影响薄膜的显微组织和力学性能。Abstract: Highpower impulse magnetron sputtering(HiPIMS) is a novel ionized physical vapor deposition (IPVD) technology with high power density and ionization rate. The power density of the high power pulse in HiPIMS could be as high as 103 kW/cm2. The peak of the target current up to 100 A can only be reached when the bias voltage reaches or exceedes the “snowslide type” voltage; the plasma density near the target could be as high as 1018～1019 m?3 and the ionization rate of the Cu plasma can reach be 60%～70% in our test. The duration, frequency and shape of the pulse have a great influence on the plasma as well as the quality of the coatings. Compared with DC magnetron sputtering, smoother and denser films can be produced and better film adhesion can be achieved when HiPIMS is applied. Research shows that bias, deposition rate and pressure have influence on the HiPIM deposition progress, which will affect the microscopic structure and mechanical property of the film.
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