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深亚微米IC超浅结的SIMS表征

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瞿欣, 王家楫. 2005: 深亚微米IC超浅结的SIMS表征, 质谱学报, 26(z1): 13-14. doi: 10.3969/j.issn.1004-2997.2005.z1.007
引用本文: 瞿欣, 王家楫. 2005: 深亚微米IC超浅结的SIMS表征, 质谱学报, 26(z1): 13-14. doi: 10.3969/j.issn.1004-2997.2005.z1.007
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QU Xin, WANG Jia-ji. 2005: Characterization of Ultra-shallow Junction in DSM IC by Secondary Ion Mass Spectrometry, Journal of Chinese Mass Spectrometry Society, 26(z1): 13-14. doi: 10.3969/j.issn.1004-2997.2005.z1.007
Citation: QU Xin, WANG Jia-ji. 2005: Characterization of Ultra-shallow Junction in DSM IC by Secondary Ion Mass Spectrometry, Journal of Chinese Mass Spectrometry Society, 26(z1): 13-14. doi: 10.3969/j.issn.1004-2997.2005.z1.007
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深亚微米IC超浅结的SIMS表征

  • 复旦大学材料科学系,上海,200433

Characterization of Ultra-shallow Junction in DSM IC by Secondary Ion Mass Spectrometry

  • 摘要: Secondary ion mass spectrometry (SIMS) is a standard technique for characterization of dopant distribution in semiconductor industry. In the ultra-shallow junction (USJ) application, the interested depth scale was extended into the surface transient area of SIMS. There is several improved approach reviewed in this paper that can meet the requirements for the USJ characterization. Sputtering with a low energy primary ion beam incident at a large angle respect to the simple surface normal can effectively minimize the depth of the surface transient area, as well as the length of the profile tail. Oxygen leak can reduce the transient ion yield change, but induces lower depth resolution. Quadrupole SIMS can be used in B profile. As and P profiles, however, need magnetic analyzer with higher mass resolution.
    Abstract: Secondary ion mass spectrometry (SIMS) is a standard technique for characterization of dopant distribution in semiconductor industry. In the ultra-shallow junction (USJ) application, the interested depth scale was extended into the surface transient area of SIMS. There is several improved approach reviewed in this paper that can meet the requirements for the USJ characterization. Sputtering with a low energy primary ion beam incident at a large angle respect to the simple surface normal can effectively minimize the depth of the surface transient area, as well as the length of the profile tail. Oxygen leak can reduce the transient ion yield change, but induces lower depth resolution. Quadrupole SIMS can be used in B profile. As and P profiles, however, need magnetic analyzer with higher mass resolution.
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  • 刊出日期:  2005-12-30

深亚微米IC超浅结的SIMS表征

  • 复旦大学材料科学系,上海,200433

摘要: Secondary ion mass spectrometry (SIMS) is a standard technique for characterization of dopant distribution in semiconductor industry. In the ultra-shallow junction (USJ) application, the interested depth scale was extended into the surface transient area of SIMS. There is several improved approach reviewed in this paper that can meet the requirements for the USJ characterization. Sputtering with a low energy primary ion beam incident at a large angle respect to the simple surface normal can effectively minimize the depth of the surface transient area, as well as the length of the profile tail. Oxygen leak can reduce the transient ion yield change, but induces lower depth resolution. Quadrupole SIMS can be used in B profile. As and P profiles, however, need magnetic analyzer with higher mass resolution.

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