脉冲功率应用的IGBT快速驱动电路

朱晓光; 张政权; 刘庆想; 刘猛; 王庆峰

doi:10.11884/HPLPB201830.170330

强激光与粒子束

脉冲功率应用的IGBT快速驱动电路

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朱晓光, 张政权, 刘庆想, 刘猛, 王庆峰. 2018: 脉冲功率应用的IGBT快速驱动电路, 强激光与粒子束, 30(1): 112-116. doi: 10.11884/HPLPB201830.170330

引用本文:

朱晓光, 张政权, 刘庆想, 刘猛, 王庆峰. 2018: 脉冲功率应用的IGBT快速驱动电路, 强激光与粒子束, 30(1): 112-116. doi: 10.11884/HPLPB201830.170330

Zhu Xiaoguang, Zhang Zhengquan, Liu Qingxiang, Liu Meng, Wang Qingfeng. 2018: High speed IGBT gate driving circuit applied to pulsed power system, High Power Lase and Particle Beams, 30(1): 112-116. doi: 10.11884/HPLPB201830.170330

Citation:

Zhu Xiaoguang, Zhang Zhengquan, Liu Qingxiang, Liu Meng, Wang Qingfeng. 2018: High speed IGBT gate driving circuit applied to pulsed power system, High Power Lase and Particle Beams, 30(1): 112-116. doi: 10.11884/HPLPB201830.170330

脉冲功率应用的IGBT快速驱动电路

西南交通大学物理科学与技术学院,成都,610031

High speed IGBT gate driving circuit applied to pulsed power system

摘要: 根据绝缘栅双极型晶体管(IGBT)的工作特性,研究设计了一种应用于脉冲功率系统的开关驱动电路,实现了IGBT的快速开通.阐述了驱动电路的原理,设计了基于平面变压器的驱动电路,在驱动芯片基础上为栅极提供幅值为60 V脉冲电压,提高开关速度.最后使用Blumlein双线结构对驱动电路的性能进行了实验验证.应用这种驱动方式,提高了集电极电流上升速率.实验结果表明,在1000 V的工作电压下,通过IGBT的脉冲电流达到了470.53 A,脉冲前沿为40 ns,di/dt达到9.41 A/ns,相比数据手册提供的数据,该电流上升速度提高了7.53倍,实现了对IGBT的快速驱动.
- IGBT /
- 栅极驱动 /
- di/dt /
- 平面变压器 /
- 脉冲功率系统
Abstract: Based on the performance characteristics of Insulated Gate Bipolar Translator(IGBT),a new type of switch driving circuit for pulsed power system has been designed.The switch turns on quickly with this driving circuit.The principle of this driving circuit is elaborated,and the circuit based on transformer is designed to offer gate pulses voltage as high as 60 V,so that switching speed can be improved.The driving circuit and pulse forming network are simulated by software.Meanwhile,experiment confirms this strategy using pulse forming network in Blumlein construction.By this strategy of driving,both pulse current through IGBT and the current slope are improved.Extended results of the performance of driving circuit are presented,which show that,the peak current is 470.53 A and the current slope is 9.41 A/ns at the voltage of 1 kV.The target of high-speed gate driving is achieved,and the current slope is 7.53 times the data given by the datasheet.

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脉冲功率应用的IGBT快速驱动电路

西南交通大学物理科学与技术学院,成都,610031

关键词:

摘要: 根据绝缘栅双极型晶体管(IGBT)的工作特性,研究设计了一种应用于脉冲功率系统的开关驱动电路,实现了IGBT的快速开通.阐述了驱动电路的原理,设计了基于平面变压器的驱动电路,在驱动芯片基础上为栅极提供幅值为60 V脉冲电压,提高开关速度.最后使用Blumlein双线结构对驱动电路的性能进行了实验验证.应用这种驱动方式,提高了集电极电流上升速率.实验结果表明,在1000 V的工作电压下,通过IGBT的脉冲电流达到了470.53 A,脉冲前沿为40 ns,di/dt达到9.41 A/ns,相比数据手册提供的数据,该电流上升速度提高了7.53倍,实现了对IGBT的快速驱动.

English Abstract

High speed IGBT gate driving circuit applied to pulsed power system

西南交通大学物理科学与技术学院,成都,610031

Keywords:

Abstract: Based on the performance characteristics of Insulated Gate Bipolar Translator(IGBT),a new type of switch driving circuit for pulsed power system has been designed.The switch turns on quickly with this driving circuit.The principle of this driving circuit is elaborated,and the circuit based on transformer is designed to offer gate pulses voltage as high as 60 V,so that switching speed can be improved.The driving circuit and pulse forming network are simulated by software.Meanwhile,experiment confirms this strategy using pulse forming network in Blumlein construction.By this strategy of driving,both pulse current through IGBT and the current slope are improved.Extended results of the performance of driving circuit are presented,which show that,the peak current is 470.53 A and the current slope is 9.41 A/ns at the voltage of 1 kV.The target of high-speed gate driving is achieved,and the current slope is 7.53 times the data given by the datasheet.

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脉冲功率应用的IGBT快速驱动电路

High speed IGBT gate driving circuit applied to pulsed power system

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脉冲功率应用的IGBT快速驱动电路

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High speed IGBT gate driving circuit applied to pulsed power system

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