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超低泄漏电流二极管单粒子位移损伤电流计算
Calculations of single particle displacement damage currents in ultra-low leakage current diode
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摘要: 提出了一种计算超低泄漏电流硅二极管的单粒子位移损伤电流的方法。采用 SRIM 软件计算了252 Cf 源的裂变碎片入射二极管产生的初级撞出原子的分布,并采用 Shockley-Read-Hall 复合理论探讨了单粒子位移损伤电流值与缺陷参数的关系,计算了252 Cf 源辐照引起的单粒子位移损伤电流台阶值,计算结果与实验结果一致。针对耗尽区电场非均匀的特点,提出电场分层近似方法来考虑处于耗尽区中不同位置的初级撞出原子产生的缺陷对泄漏电流的影响。结果表明,PN 结附近电场增强载流子产生效应最显著,考虑电场增强效应的情况下单个 Frenkel 缺陷引起的泄漏电流比未考虑电场增强效应时高约44倍；裂变碎片80 MeV Nd入射比106 MeV Cd 入射引起的单粒子位移损伤电流大；252 Cf 源的裂变碎片在二极管中引起的单粒子位移损伤电流台阶值主要集中于1 fA 至1 pA 之间。Abstract: This paper proposes a new method to calculate the single particle displacement damage currents in ultra-low leak-age current diode.The spatial distribution of primary knock-on atoms in the diode is simulated with SRIM.Based on the SRIM results,the SPDD current steps in the diode irradiated by 25 2 Cf are calculated with Shockley-Read-Hall theory.The theoretical calculations of single particle displacement damage currents conduce to good agreements with experimental data.A stratified con-stant-gradient method is proposed to approximately describe the non-uniform distribution of electric field in the depletion region, therefore,the contributions of defects created in different positions in the depletion region to the increased leakage current can be calculated independently.The results show that the carriers emission is most significantly enhanced by electric field near the PN junction.Compared to the calculated results without considering the field-enhanced emission effect,the contribution of single de-fect near the PN junction to the increase of leakage current is two orders of magnitude higher when the electric field-enhanced e-mission effect is taken into consideration.Besides,the SPDD currents induced by 80 MeV Nd ions are generally higher than that by 106 MeV Cd ions.The SPDD currents induced by these ions are mainly between 1 fA to 1 pA.
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