半导体器件HPM损伤脉宽效应机理分析

李平; 刘国治; 黄文华; 王亮平

强激光与粒子束

半导体器件HPM损伤脉宽效应机理分析

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李平, 刘国治, 黄文华, 王亮平. 2001: 半导体器件HPM损伤脉宽效应机理分析, 强激光与粒子束, 13(3): 353-356.

引用本文:

李平, 刘国治, 黄文华, 王亮平. 2001: 半导体器件HPM损伤脉宽效应机理分析, 强激光与粒子束, 13(3): 353-356.

LI Ping, LIU Guo-zhi, HUANG Wen-hua, WANG Liang-Ping. 2001: The mechanism of HPM pulse-duration damage effect on semiconductor component, High Power Lase and Particle Beams, 13(3): 353-356.

Citation:

LI Ping, LIU Guo-zhi, HUANG Wen-hua, WANG Liang-Ping. 2001: The mechanism of HPM pulse-duration damage effect on semiconductor component, High Power Lase and Particle Beams, 13(3): 353-356.

半导体器件HPM损伤脉宽效应机理分析

西北核技术研究所,

The mechanism of HPM pulse-duration damage effect on semiconductor component

摘要: HPM能量在半导体器件损伤缺陷区的热量沉积以及向周围材料的热量扩散，是造成半导体器件损伤脉宽效应的机理；分别得到了全脉宽段、长脉宽段和短脉宽段的损伤经验公式，该损伤经验公式能较好地对实验和理论模拟效应数据进行拟合。
- 半导体器件 /
- HPM /
- 脉冲宽度 /
- 损伤效应
Abstract: The mechanism of HPM pulse-duration damage effect on semiconductor component results from heat accumulation and diffusion process in the defect area. The experiential formulae of HPM pulse-duration damage effect in the range of whole pulse-durarion, long pulse-duration as well as short pulse-duration are obtained, which agree with experiments and numerical simulation effect data very well.