摘要:
聚丙烯电介质的直流击穿场强是影响其储能密度的关键因素,纳米氧化铝掺杂是一种提高聚合物电介质击穿场强的有效方法,因此有必要开展聚丙烯/氧化铝纳米电介质直流击穿特性的研究.为了探究其直流击穿机理,通过熔融共混法制备了聚丙烯/氧化铝纳米电介质试样,观察了其显微结构,并对其表面电位衰减特性、体电阻率和直流击穿场强进行了测试.实验结果表明,随着纳米氧化铝含量的增加,深陷阱能级和密度、体电阻率和直流击穿场强都呈现先升高后降低的趋势,当纳米氧化铝含量为0.5 wt%时出现最大值,其中,直流击穿场强相比于未掺杂时可提高27%左右.根据纳米电介质交互区模型,分析了聚丙烯/氧化铝纳米电介质的显微结构和陷阱参数之间的关系.基于空间电荷击穿理论,利用陷阱参数对聚丙烯/氧化铝纳米电介质直流击穿机理进行了探讨.认为交互区为聚丙烯/氧化铝纳米电介质提供了更多深陷阱,而深陷阱能级和密度在较高纳米掺杂量时出现不同程度的降低可能是由双电层模型交互区重叠所致;深陷阱能级和密度的增加可降低载流子的注入量,进而提高其体电阻率和直流击穿场强.
Abstract:
Polypropylene (PP) is widely used as capacitor films due to its better dielectric, mechanical, and thermal perfor-mance. In order to reduce the cost and size of capacitor, high energy density for PP dielectric is pursued. Since energy density is in quadratic proportion to direct current (dc) breakdown strength for linear dielectric, the enhancement of dc breakdown strength for PP dielectric is a primary choice to improve the energy density. Considering that the incorpo-ration of nano-Al2O3 is an effective method to improve the dc breakdown strength for polymer, it is required to study the dc breakdown strength of PP/Al2O3 nanodielectric.In order to explore the breakdown mechanism, PP/Al2O3 nanodielectrics with different nano-particle contents are prepared by melt blending, and the samples are prepared by hot pressing. Their microstructures are observed by scan-ning electron microscopic. Isothermal surface potential decay, bulk resistivity, and dc breakdown strength of the samples are also measured. The experimental results show that the energy and density of deep traps, bulk resistivity, and dc breakdown strength first increase and then decrease with the increase in nano-Al2O3 content. The maximum values are obtained at a filer content value of 0.5 wt%, where dc breakdown strength can be increased by about 27%. Based on interface model, the relation between microstructure and trap is investigated. In view of space charge breakdown theory, the mechanism of dc breakdown for PP/Al2O3 nanodielectric is explored by trap parameters. It is indicated that the interface can provide more deep traps in PP/Al2O3 nanodielectric, while the decrease in the energy and density of deep traps can be attributed to the overlap of interfaces in electrical double layer. The increase in the energy and density of deep traps makes more carriers trapped near the injecting contact, thus reducing the effective field for carrier injection due to the internal field generated by the trapped carriers. The reduction of carrier injection can moderate the distortion of field in PP dielectric, consequently, resulting in enhancing the dc breakdown strength.
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