InGaAsSb四元合金材料禁带宽度的计算方法?

物理学报

InGaAsSb四元合金材料禁带宽度的计算方法?

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刘超, 魏志鹏, 安宁, 何斌太, 刘鹏程, 刘国军. 2014: InGaAsSb四元合金材料禁带宽度的计算方法?, 物理学报, null(24): 248102. doi: 10.7498/aps.63.248102

引用本文:

刘超, 魏志鹏, 安宁, 何斌太, 刘鹏程, 刘国军. 2014: InGaAsSb四元合金材料禁带宽度的计算方法?, 物理学报, null(24): 248102. doi: 10.7498/aps.63.248102

Liu Chao, Wei Zhi-Peng, An Ning, He Bin-Tai, Liu Peng-Cheng, Liu Guo-Jun?. 2014: Calculation metho ds of InGaAsSb quaternary alloy band gap, Acta Physica Sinica, null(24): 248102. doi: 10.7498/aps.63.248102

Citation:

Liu Chao, Wei Zhi-Peng, An Ning, He Bin-Tai, Liu Peng-Cheng, Liu Guo-Jun?. 2014: Calculation metho ds of InGaAsSb quaternary alloy band gap, Acta Physica Sinica, null(24): 248102. doi: 10.7498/aps.63.248102

InGaAsSb四元合金材料禁带宽度的计算方法?

长春理工大学，高功率半导体激光国家重点实验室，长春 130022

Calculation metho ds of InGaAsSb quaternary alloy band gap

摘要: 讨论了计算InGaAsSb四元合金材料禁带宽度常用的Glisson方法和Moon方法，比较了它们的计算结果。将两者化成相同形式下的等价公式后发现，二者都只考虑了Γ点带隙弯曲因子对禁带宽度的影响。通过考虑自旋轨道分裂带对价带的影响，提出一种将自旋轨道分裂带弯曲因子引入计算InGaAsSb禁带宽度的新方法。研究结果表明，该方法计算结果的准确性要优于两种常见的方法。
- InGaAsSb /
- 禁带宽度 /
- 弯曲因子
Abstract: Two popular interpolation formulas of calculating InGaAsSb quaternary alloy band gap energy are discussed, and the calculation results from them are presented and compared. It is found, after the two formulas have been converted into equivalent formulas in the same forms, that in them there is taken into consideration only the influence of bowing parameter in theΓ valley. In this paper, the effect of the spin-orbit splitting on the valence band is considered, and a new method of calculating the InGaAsSb band gap is proposed by introducing the bowing parameter of spin-orbit splitting. The results show that the introduction of the bowing parameter of spin-orbit splitting can improve the accuracy of the calculation results compared with the above two methods. When the fraction of In is less than 0.72, the calculation obtained from our method is most accurate.

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InGaAsSb四元合金材料禁带宽度的计算方法?

长春理工大学，高功率半导体激光国家重点实验室，长春 130022

关键词:

InGaAsSb /
禁带宽度 /
弯曲因子

摘要: 讨论了计算InGaAsSb四元合金材料禁带宽度常用的Glisson方法和Moon方法，比较了它们的计算结果。将两者化成相同形式下的等价公式后发现，二者都只考虑了Γ点带隙弯曲因子对禁带宽度的影响。通过考虑自旋轨道分裂带对价带的影响，提出一种将自旋轨道分裂带弯曲因子引入计算InGaAsSb禁带宽度的新方法。研究结果表明，该方法计算结果的准确性要优于两种常见的方法。

English Abstract

Calculation metho ds of InGaAsSb quaternary alloy band gap

长春理工大学，高功率半导体激光国家重点实验室，长春 130022

Keywords:

InGaAsSb /
禁带宽度 /
弯曲因子

Abstract: Two popular interpolation formulas of calculating InGaAsSb quaternary alloy band gap energy are discussed, and the calculation results from them are presented and compared. It is found, after the two formulas have been converted into equivalent formulas in the same forms, that in them there is taken into consideration only the influence of bowing parameter in theΓ valley. In this paper, the effect of the spin-orbit splitting on the valence band is considered, and a new method of calculating the InGaAsSb band gap is proposed by introducing the bowing parameter of spin-orbit splitting. The results show that the introduction of the bowing parameter of spin-orbit splitting can improve the accuracy of the calculation results compared with the above two methods. When the fraction of In is less than 0.72, the calculation obtained from our method is most accurate.

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