摘要:
为了满足红外激光测试技术对多光谱集成光源在光谱范围和峰值精度等方面的要求,提出了一种高精度的多波长红外激光二极管,并设计了能够集成860 nm,905 nm和1064 nm(脉冲/单模)四种激光芯片的封装结构。建立了基于上述封装结构下中心热沉的温度场分布模型,并根据数学建模工具求解的中心热沉温度场数值分布规范了中心热沉的加工工艺。为了验证多波长激光二极管中心热沉对输出峰值光谱热漂移现象的抑制效果,制备了多波长激光二极管样机,并搭建了观察其峰值光谱热漂移现象的实验装置。实验结果显示,样机仅有两种芯片的峰值光谱发生了1-3 nm的微弱漂移,并未超出规定的峰值半宽。该现象证明了多波长激光二极管的输出光谱具备较高的精度和良好的稳定性。
关键词:
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多波长
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峰值光谱
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热漂移
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温度场
Abstract:
To meet the requirements, requested in infrared-laser testing techniques, in spectral range and peaks precision of multi-spectral source, we present a method for preparing multi-wavelength infrared laser diode with a high precision, and design a packaging structure which can integrate four kinds of laser chips with wavelengths 860 nm, 905 nm and 1064 nm (pulse/single). The 3D heat conduction differential equations of central-substrate are given based on the above packaging structure. According to the solutions of numerical temperature field distribution, which are solved through a mathematic-modeling tool, the processing technique of central-substrate is optimized. And the prototype of multi-wavelength laser diode is prepared, and the experimental apparatus is built which can be used to observe the phenomenon of spectral peak thermal-drifting. Experimental results show that only two spectral peaks are drifting slightly 1-3 nm. The drifting amount is within the half width range of their spectral peak. This phenomenon proves that the output spectra of multi-wavelength laser diode have a high precision and a well thermal stability.
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