摘要:
在有效质量近似下利用打靶法求出Ga1?xInxNyAs1?y/GaAs量子阱中的本征能级En,并通过费米黄金规则计算电子-LO声子由第一激发态到基态的散射率和平均散射率随温度、阱宽以及氮(N)和铟(In)组分变化的规律。计算结果表明：在In组分恒定的情况下,随着N组分的增加,散射率和平均散射率增加；在N组分恒定的情况下,随着In组分的增加,散射率和平均散射率减小；随着温度的增加,在温度较低时散射率和平均散射率随温度的增加变化不大,在温度较高时随温度的增加而增加；随着阱宽的增加,散射率和平均散射率都是先增加到一个最大值,然后再减小,最大值出现在阱宽200?A附近。计算结果对Ga1?xInxNyAs1?y/GaAs量子阱在光电子器件应用方面有一定的指导意义。
Abstract:
Within the framework of effective mass approximation, the values of energy eigenvalue En in Ga1?xInxNyAs1?y/GaAs quantum well are theoretically calculated using shooting method. In addition, we calculate the electron-LO phonon scattering and mean scat-tering rate at different temperatures, well width, N concentrations and In concentrations for an electron initially in the second subband and finally in the ground state using Fermi’s golden rule. It is shown that the electron-LO phonon scattering and mean scattering rate increase with the increase of N concentration under the In concentration constant. The electron-LO phonon scattering and mean scattering rate decrease with the increase of In concentration under the In concentration constant. The electron-LO phonon scattering increases monotonically with the increase of temperature. When the temperature is relatively low, the variation of mean scattering rate is not obvious with the increase of temperature When the temperature is relatively high, mean scattering rate increases with the increase of temperature. The scattering and mean scattering rate increase up to their maxima and then begin to decrease as the well width increases. The maximum value is reached when the well width is about 200 ?A. Our calculated results are meaningful and can be used for designing the optoelectronic devices based on Ga1?xInxNyAs1?y/GaAs quantum well.
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