三维H形栅SOI NMOS器件总剂量条件下的单粒子效应*

卓青青; 刘红侠; 王志

doi:10.7498/aps.62.176106

物理学报

三维H形栅SOI NMOS器件总剂量条件下的单粒子效应*

, ,

卓青青, 刘红侠, 王志. 2013: 三维H形栅SOI NMOS器件总剂量条件下的单粒子效应*, 物理学报, null(17): 380-385. doi: 10.7498/aps.62.176106

引用本文:

卓青青, 刘红侠, 王志. 2013: 三维H形栅SOI NMOS器件总剂量条件下的单粒子效应*, 物理学报, null(17): 380-385. doi: 10.7498/aps.62.176106

Zhuo Qing-Qing, Liu Hong-Xia, Wang Zhi. 2013: Single event effect of 3D H-gate SOI NMOS devices in total dose ionizing, Acta Physica Sinica, null(17): 380-385. doi: 10.7498/aps.62.176106

Citation:

Zhuo Qing-Qing, Liu Hong-Xia, Wang Zhi. 2013: Single event effect of 3D H-gate SOI NMOS devices in total dose ionizing, Acta Physica Sinica, null(17): 380-385. doi: 10.7498/aps.62.176106

三维H形栅SOI NMOS器件总剂量条件下的单粒子效应*

西安电子科技大学微电子学院，宽禁带半导体材料与器件教育部重点实验室，西安 710071

Single event effect of 3D H-gate SOI NMOS devices in total dose ionizing

摘要: 本文通过数值模拟研究了H形栅SOI NMOS器件在总剂量条件下的单粒子效应。首先通过分析仿真程序中影响迁移率的物理模型，发现通过修改了的由于表面散射造成迁移率退化的Lombardi模型，仿真的SOI晶体管转移特性和实测数据非常符合。然后使用该模型，仿真研究了处于截止态(VD=5 V)的H形栅SOI NMOS器件在总剂量条件下的单粒子效应。结果表明：随着总剂量水平的增加，器件在同等条件的重离子注入下，产生的最大漏极电流脉冲只是稍有增大，但是漏极收集电荷随总剂量水平大幅增加。
- 单粒子脉冲电流 /
- 漏极收集电荷 /
- 总剂量效应
Abstract: The single event effect of H-gate SOI NMOS devices in total dose ionizing are studied by means of numerical simulation. By analyzing the mobility degradation in the simulation process, the corrected mobility Lombardi model due to degradation at interfaces is obtained. As the simulated transfer characteristic curves of SOI transistor agree well with the experimental data, the single event effect of H-gate SOI NMOS devices in total dose ionizing is simulated by this corrected model. Results shows that the maximum drain currents of devices under the same conditions are slight increasing, but the transistors get a significant increase in the drain collected charge with increasing total dose level.

计量

文章访问数: 415
HTML全文浏览数: 129
PDF下载数: 0
施引文献: 0

三维H形栅SOI NMOS器件总剂量条件下的单粒子效应*

西安电子科技大学微电子学院，宽禁带半导体材料与器件教育部重点实验室，西安 710071

关键词:

摘要: 本文通过数值模拟研究了H形栅SOI NMOS器件在总剂量条件下的单粒子效应。首先通过分析仿真程序中影响迁移率的物理模型，发现通过修改了的由于表面散射造成迁移率退化的Lombardi模型，仿真的SOI晶体管转移特性和实测数据非常符合。然后使用该模型，仿真研究了处于截止态(VD=5 V)的H形栅SOI NMOS器件在总剂量条件下的单粒子效应。结果表明：随着总剂量水平的增加，器件在同等条件的重离子注入下，产生的最大漏极电流脉冲只是稍有增大，但是漏极收集电荷随总剂量水平大幅增加。

English Abstract

Single event effect of 3D H-gate SOI NMOS devices in total dose ionizing

西安电子科技大学微电子学院，宽禁带半导体材料与器件教育部重点实验室，西安 710071

Keywords:

Abstract: The single event effect of H-gate SOI NMOS devices in total dose ionizing are studied by means of numerical simulation. By analyzing the mobility degradation in the simulation process, the corrected mobility Lombardi model due to degradation at interfaces is obtained. As the simulated transfer characteristic curves of SOI transistor agree well with the experimental data, the single event effect of H-gate SOI NMOS devices in total dose ionizing is simulated by this corrected model. Results shows that the maximum drain currents of devices under the same conditions are slight increasing, but the transistors get a significant increase in the drain collected charge with increasing total dose level.

全文HTML

参考文献 (0)

下载: 全尺寸图片幻灯片

返回文章

用微信扫码二维码

分享至好友和朋友圈

三维H形栅SOI NMOS器件总剂量条件下的单粒子效应*

Single event effect of 3D H-gate SOI NMOS devices in total dose ionizing

计量

出版历程

三维H形栅SOI NMOS器件总剂量条件下的单粒子效应*

English Abstract

Single event effect of 3D H-gate SOI NMOS devices in total dose ionizing

全文HTML

目录