摘要:
采用60Coγ射线源对高铝组分Al0.5Ga0.5N盲紫外p-i-n结构光探测器和Si基可见光p-i-n结构探测器进行了累计剂量分别为0.1,1,10 Mrad(Si)总剂量辐照实验.实验发现,随着辐照剂量的增加, AlGaN盲紫外p-i-n结构光探测器的理想因子显著增大,辐照后理想因子n>2;而Si基可见光p-i-n结构探测器的理想因子随辐照剂量的变化并不明显. AlGaN盲紫外p-i-n结构光探测器理想因子的退化可能主要是因为欧姆接触性能的退化, Si基可见光p-i-n结构探测器的理想因子的变化则可能是由于敏感层的退化.
Abstract:
High Al content AlxGa1?xN solar-blind photodetector and Si p-i-n visible light detector were irradiated with 60Coγ-rays up to 0.1, 1, 10 Mrad(Si). With the increase of total radiation dose, the ideality factor of AlxGa1?xN p-i-n diode saw a significant rise and the ideality factor n is grater than 2 with a total dose up to 10 Mrad(Si);the ideality factor of Si p-i-n diode, however, changed only slightly even up to 10 Mrad(Si). The degradation of AlxGa1?xN p-i-n diode might be attributed to the deterioration of Ohmic contacts, however, to some extent, the slight increase of the Si p-i-n diode might be due to the degradation of the insensitive layer.