非晶硅太阳电池BZO/p-a-SiC:H接触特性改善的研究

王利; 张晓丹; 杨旭; 魏长春; 张德坤; 王广才; 孙建; 赵颖

doi:10.7498/aps.62.058801

物理学报

非晶硅太阳电池BZO/p-a-SiC:H接触特性改善的研究

, , , , , , ,

王利, 张晓丹, 杨旭, 魏长春, 张德坤, 王广才, 孙建, 赵颖. 2013: 非晶硅太阳电池BZO/p-a-SiC:H接触特性改善的研究, 物理学报, null(5): 551-556. doi: 10.7498/aps.62.058801

引用本文:

2013: Study of the contact property between BZO and p-a-SiC in amorphous silicon solar cell?, Acta Physica Sinica, null(5): 551-556. doi: 10.7498/aps.62.058801

Citation:

2013: Study of the contact property between BZO and p-a-SiC in amorphous silicon solar cell?, Acta Physica Sinica, null(5): 551-556. doi: 10.7498/aps.62.058801

非晶硅太阳电池BZO/p-a-SiC:H接触特性改善的研究

南开大学光电子薄膜器件与技术研究所,天津 300071

Study of the contact property between BZO and p-a-SiC in amorphous silicon solar cell?

摘要: 采用重掺杂的p型微晶硅来改善前电极掺硼氧化锌(ZnO:B)和窗口层p型非晶硅碳(p-a-SiC)之间的非欧姆接触特性.通过优化插入层p型微晶硅的沉积参数(氢稀释比H2/SiH4、硼掺杂比B2H6/SiH4)获得了较薄厚度下(20 nm)暗电导率高达4.2 S/cm的p型微晶硅材料.在本征层厚度约为150 nm,仅采用Al背反射电极的情况下,获得了效率6.37%的非晶硅顶电池(Voc=911 mV, FF=71.7%, Jsc=9.73 mA/cm2),开路电压Voc和填充因子FF均较无插入层的电池有大幅提升.
- 氧化锌 /
- p型微晶硅 /
- 非晶硅顶电池 /
- 非欧姆接触
Abstract: Highly conductive p-type microcrystalline silicon thin layer is inserted between the front layer (ZnO:B) and the window layer(p-a-SiC) in a p-i-n amorphous silicon solar cell, and the inserted layer is found to be able to eliminate the non-ohmic contact, which is caused by the difference in the work function between the ZnO:B and p-a-SiC. The properties of the p-type microcrystalline silicon are studied by varying layer thickness, hydrogen dilution ratio and B2H6/SiH4 ratio. The optimized p-type microcrystalline silicon film can have a dark conductivity as large as 4.2 S/cm at a thickeness of 20 nm. The p-i-n type amorphous silicon solar cell with the p-type microcrystalline silicon is shown to have a good open circuit voltage and fill factor compared with without the p-type microcrystalline silicon layer.

计量

文章访问数: 495
HTML全文浏览数: 152
PDF下载数: 9
施引文献: 0

非晶硅太阳电池BZO/p-a-SiC:H接触特性改善的研究

南开大学光电子薄膜器件与技术研究所,天津 300071

关键词:

摘要: 采用重掺杂的p型微晶硅来改善前电极掺硼氧化锌(ZnO:B)和窗口层p型非晶硅碳(p-a-SiC)之间的非欧姆接触特性.通过优化插入层p型微晶硅的沉积参数(氢稀释比H2/SiH4、硼掺杂比B2H6/SiH4)获得了较薄厚度下(20 nm)暗电导率高达4.2 S/cm的p型微晶硅材料.在本征层厚度约为150 nm,仅采用Al背反射电极的情况下,获得了效率6.37%的非晶硅顶电池(Voc=911 mV, FF=71.7%, Jsc=9.73 mA/cm2),开路电压Voc和填充因子FF均较无插入层的电池有大幅提升.

English Abstract

Study of the contact property between BZO and p-a-SiC in amorphous silicon solar cell?

南开大学光电子薄膜器件与技术研究所,天津 300071

Keywords:

Abstract: Highly conductive p-type microcrystalline silicon thin layer is inserted between the front layer (ZnO:B) and the window layer(p-a-SiC) in a p-i-n amorphous silicon solar cell, and the inserted layer is found to be able to eliminate the non-ohmic contact, which is caused by the difference in the work function between the ZnO:B and p-a-SiC. The properties of the p-type microcrystalline silicon are studied by varying layer thickness, hydrogen dilution ratio and B2H6/SiH4 ratio. The optimized p-type microcrystalline silicon film can have a dark conductivity as large as 4.2 S/cm at a thickeness of 20 nm. The p-i-n type amorphous silicon solar cell with the p-type microcrystalline silicon is shown to have a good open circuit voltage and fill factor compared with without the p-type microcrystalline silicon layer.

全文HTML

参考文献 (0)

下载: 全尺寸图片幻灯片

返回文章

用微信扫码二维码

分享至好友和朋友圈

非晶硅太阳电池BZO/p-a-SiC:H接触特性改善的研究

Study of the contact property between BZO and p-a-SiC in amorphous silicon solar cell?

计量

出版历程

非晶硅太阳电池BZO/p-a-SiC:H接触特性改善的研究

English Abstract

Study of the contact property between BZO and p-a-SiC in amorphous silicon solar cell?

全文HTML

目录