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多台阶器件结构深层表面光刻工艺优化
The optimization of lithography process on the deep muti-stepped surface
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摘要: 针对多台阶器件结构深层表面光刻工艺中存在的问题，对不同台阶高度分别测量了台阶表面及台阶底部沉积的光刻胶厚度，并对台阶高度与光刻胶厚度的关系进行数值描述与分析．基于Beer定律对薄光刻胶光吸收系数的描述，分析了通过实验得到的不同曝光时间下光刻胶的光强透过率曲线，解释了随着曝光时间的增加光刻胶光强透过率发生变化的原因，同时认为光刻胶光吸收系数与光刻胶厚度密切相关．在此基础上，确定了台阶底部堆积光刻胶完全曝光所需时间．优化平面光刻工艺，在不同台阶高度的深台阶表面及底部同时制作出窄线条的高质量图形．Abstract: In this article, we investigate the problems existing in the lithography on the deep multi-stepped surface. Different photoresist thicknesses above and under the step are measured in experiment. The relationship between step height and photoresist thickness is discussed and numerically described. Based on the description of Beer model about the light absorption coefficient, the curves of different light transmittances at different times are analysed. Reasons why the light transmittance changes with time are explained, and the light absorption coefficient is believed to be related to photoresist thickness. On this basis, the lithography process is optimized. The patterns with narrow line-width under the deep step on the wafer are obtained.
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