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钛离子辐照对MgB2超导薄膜的载流能力和磁通钉扎能力的影响
The effects of Ti ion-irradiation on critical current and flux pinning in MgB2 thin film
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摘要: 利用混合物理化学气相沉积法（hybrid physical—chemical vapor deposition，HPCVD）可以制备出高性能的MgB2超导薄膜，再对薄膜进行钛（Ti）离子辐照处理．经过辐照处理后的样品被掺入了Ti元素，与未处理的干净MgB2样品相比，其超导转变温度没有出现大幅度的下降，而在外加磁场下的临界电流密度得到了明显的提高，同时样品的上临界磁场也得到了提高．在温度5K，外加垂直磁场为4T的情况下，Ti离子辐照剂量为1×1013／cm2的样品的临界电流密度达到了1．72×105A／cm2，比干净的MgB2要高出许多，而其超导转变温度仍能维持在39．9K的较高水平．
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关键词:
- MgB2超导薄膜 /
- 钛离子辐照 /
- 钛掺杂 /
- 混合物理化学气相沉积法
Abstract: High-quality MgB2 films are fabricated via hybrid physical-chemical vapor deposition (HPCVD) and irradiated by Ti ions. Com- pared with the unirradiated film, the Ti-irradiated MgB2 film shows a high critical current density (Jc) in magnetic field and also a high upper critical field (He2), while the superconducting transition temperature (Tc) does not decrease significantly. The Ti-irradiated film with a best fluence at 1×1013/cm2 shows a high Jc of 1.72×105 A/cm2 in 4 T perpendicular field at a temperature of 5 K and a moderately decreased Tc at 39.9 K. -
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