直流三极溅射法制备CuInS2薄膜

物理学报

直流三极溅射法制备CuInS2薄膜

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于丹阳, 小林康之, 小林敏志. 2012: 直流三极溅射法制备CuInS2薄膜, 物理学报, 61(19): 490-495.

引用本文:

于丹阳, 小林康之, 小林敏志. 2012: 直流三极溅射法制备CuInS2薄膜, 物理学报, 61(19): 490-495.

2012: Preparation and structure of CuInS2 film by the direct current triode sputtering, Acta Physica Sinica, 61(19): 490-495.

Citation:

2012: Preparation and structure of CuInS2 film by the direct current triode sputtering, Acta Physica Sinica, 61(19): 490-495.

直流三极溅射法制备CuInS2薄膜

上海大学材料科学与工程学院,电子信息材料系,上海200072
日本新渴大学电气电子工学研究科,小林研究室,日本950-2181

Preparation and structure of CuInS2 film by the direct current triode sputtering

摘要: 采用直流三极溅射装置制备获得了CuInS2薄膜，其中溅射靶采用一定面积比的[Cu]／[In]混合靶，反应气体采用CS2气体．本文中主要研究了0．02Pa分压反应气体条件下不同面积比的[Cu]/[Iu]混合靶和沉积基板温度对CuInS2薄膜结构和成分的影响，其中CuInS2薄膜制备所用时间为2h生长的厚度为1—2μm．通过对CuInS2薄膜的EPMA，X射线衍射测试分析表明，最佳的CuInS2薄膜可在面积比[Cu]／[In]混合靶为1．4：1和可控温度（150，250和350℃）的条件下制备获得，并且其结构被确认为黄铜矿结构．通过实验结果计算出CuInS2薄膜层有约为8．9％的C杂质含量．
- 黄铜矿结构半导体 /
- 反应溅射 /
- CuInS2薄膜 /
- EPMA
Abstract: CuInS2 thin films are deposited on Pyrex slide glass substrates by direct current triode sputtering using CS2 as a reactive gas and Cu/In mixed metal plate as sputtering target. The effects of substrate temperature and area ratio of Cu to In on the crystalline structure and composition of CuInS2 films are discussed under the same growth condition (0.02 Pa of CS2 partial pressure). When sputtering time is 2 h, their thickness are obtained to be 1-2 μm. The CulnS2 films are characterized by EPMA, XRD, and so on. The results show that the optimal CuInS2 films are obtained at a ratio of 1.4 and growth temperatures of 150 ℃, 250 ℃ and 350 ℃, and that these films each have a chalcopyrite structure. The content of carbon impurity in each of the as-deposited CuInS2 films is found to be about 8.9%.

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直流三极溅射法制备CuInS2薄膜

上海大学材料科学与工程学院,电子信息材料系,上海200072
日本新渴大学电气电子工学研究科,小林研究室,日本950-2181

关键词:

摘要: 采用直流三极溅射装置制备获得了CuInS2薄膜，其中溅射靶采用一定面积比的[Cu]／[In]混合靶，反应气体采用CS2气体．本文中主要研究了0．02Pa分压反应气体条件下不同面积比的[Cu]/[Iu]混合靶和沉积基板温度对CuInS2薄膜结构和成分的影响，其中CuInS2薄膜制备所用时间为2h生长的厚度为1—2μm．通过对CuInS2薄膜的EPMA，X射线衍射测试分析表明，最佳的CuInS2薄膜可在面积比[Cu]／[In]混合靶为1．4：1和可控温度（150，250和350℃）的条件下制备获得，并且其结构被确认为黄铜矿结构．通过实验结果计算出CuInS2薄膜层有约为8．9％的C杂质含量．

English Abstract

Preparation and structure of CuInS2 film by the direct current triode sputtering

上海大学材料科学与工程学院,电子信息材料系,上海200072
日本新渴大学电气电子工学研究科,小林研究室,日本950-2181

Keywords:

Abstract: CuInS2 thin films are deposited on Pyrex slide glass substrates by direct current triode sputtering using CS2 as a reactive gas and Cu/In mixed metal plate as sputtering target. The effects of substrate temperature and area ratio of Cu to In on the crystalline structure and composition of CuInS2 films are discussed under the same growth condition (0.02 Pa of CS2 partial pressure). When sputtering time is 2 h, their thickness are obtained to be 1-2 μm. The CulnS2 films are characterized by EPMA, XRD, and so on. The results show that the optimal CuInS2 films are obtained at a ratio of 1.4 and growth temperatures of 150 ℃, 250 ℃ and 350 ℃, and that these films each have a chalcopyrite structure. The content of carbon impurity in each of the as-deposited CuInS2 films is found to be about 8.9%.

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