采用AI／TaN叠层电极提高Si基GePIN光电探测器的性能

物理学报

采用AI／TaN叠层电极提高Si基GePIN光电探测器的性能

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吴政, 王尘, 严光明, 刘冠洲, 李成, 黄巍, 赖虹凯, 陈松岩. 2012: 采用AI／TaN叠层电极提高Si基GePIN光电探测器的性能, 物理学报, 61(18): 355-360.

引用本文:

吴政, 王尘, 严光明, 刘冠洲, 李成, 黄巍, 赖虹凯, 陈松岩. 2012: 采用AI／TaN叠层电极提高Si基GePIN光电探测器的性能, 物理学报, 61(18): 355-360.

2012: Improvement on performance of Si-based Ge PIN photodetector with AI/TaN electrode for n-type Ge contact, Acta Physica Sinica, 61(18): 355-360.

Citation:

2012: Improvement on performance of Si-based Ge PIN photodetector with AI/TaN electrode for n-type Ge contact, Acta Physica Sinica, 61(18): 355-360.

采用AI／TaN叠层电极提高Si基GePIN光电探测器的性能

厦门大学物理系半导体光子学研究中心,厦门,361005

Improvement on performance of Si-based Ge PIN photodetector with AI/TaN electrode for n-type Ge contact

摘要: 金属与Ge材料接触由于存在强烈的费米钉扎效应，导致金属电极与n型Ge接触引入较大的接触电阻，限制了si基Ge探测器响应带宽．本文报道了在SOI衬底上外延Ge单晶薄膜并制备了不同台面尺度的GePIN光电探测器．对比了电极分别为金属Al和A1／TaN叠层的具有相同器件结构的SOI基GePIN光电探测器的暗电流、响应度以及响应带宽等参数．发现在Al与Ge之间增加一薄层TaN可有效减小n型Ge的接触电阻，将台面直径为24um的探测器在1．55um的波长和-1V偏压下的3dB响应带宽提高了4倍．同时，器件暗电流减小一个数量级，而响应度提高了2倍．结果表明，采用TaN薄层制作金属与Ge接触电极，可有效钝化金属与Ge界面，减轻费米钉扎效应，降低金属与n-Ge接触的势垒高度，因而减小接触电阻和界面复合电流，提高探测器的光电性能．
- AI/TaN，接触电阻，Ge /
- PIN光电探测器，高频特性
Abstract: Large contact resistance due to Fermi level pinning effect at the interface between metal and Ge strongly restricts the 3 dB bandwidth of Ge photodetectors. In this paper, the Ge PIN photodetectors fabricated on silicon-on-insulator substrates, respectively, with A1 and AI/TaN electrodes are comparatively studied. It is found that 3 dB bandwidth of photodetector with 24 g.m mesa diameter using an A1/TaN stack electrode is improved by four times more than that of the same structure Ge PIN photodetector using an A1 electrode under -1 V bias at 1.55 ~tm. In addition, the dark current is reduced by one order of magnitude, and optical responsivity is enhanced by two times. These results suggest that a thin metallic TaN layer as an electrode can effectively passivate the Ge surface and alleviate the Fermi-level pinning effect, thus reducing the contact resistance and the recombination current at the interface. TaN can be considered as a promising electrode material for Ge device applications.

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采用AI／TaN叠层电极提高Si基GePIN光电探测器的性能

厦门大学物理系半导体光子学研究中心,厦门,361005

关键词:

AI/TaN，接触电阻，Ge /
PIN光电探测器，高频特性

摘要: 金属与Ge材料接触由于存在强烈的费米钉扎效应，导致金属电极与n型Ge接触引入较大的接触电阻，限制了si基Ge探测器响应带宽．本文报道了在SOI衬底上外延Ge单晶薄膜并制备了不同台面尺度的GePIN光电探测器．对比了电极分别为金属Al和A1／TaN叠层的具有相同器件结构的SOI基GePIN光电探测器的暗电流、响应度以及响应带宽等参数．发现在Al与Ge之间增加一薄层TaN可有效减小n型Ge的接触电阻，将台面直径为24um的探测器在1．55um的波长和-1V偏压下的3dB响应带宽提高了4倍．同时，器件暗电流减小一个数量级，而响应度提高了2倍．结果表明，采用TaN薄层制作金属与Ge接触电极，可有效钝化金属与Ge界面，减轻费米钉扎效应，降低金属与n-Ge接触的势垒高度，因而减小接触电阻和界面复合电流，提高探测器的光电性能．

English Abstract

Improvement on performance of Si-based Ge PIN photodetector with AI/TaN electrode for n-type Ge contact

厦门大学物理系半导体光子学研究中心,厦门,361005

Keywords:

AI/TaN，接触电阻，Ge /
PIN光电探测器，高频特性

Abstract: Large contact resistance due to Fermi level pinning effect at the interface between metal and Ge strongly restricts the 3 dB bandwidth of Ge photodetectors. In this paper, the Ge PIN photodetectors fabricated on silicon-on-insulator substrates, respectively, with A1 and AI/TaN electrodes are comparatively studied. It is found that 3 dB bandwidth of photodetector with 24 g.m mesa diameter using an A1/TaN stack electrode is improved by four times more than that of the same structure Ge PIN photodetector using an A1 electrode under -1 V bias at 1.55 ~tm. In addition, the dark current is reduced by one order of magnitude, and optical responsivity is enhanced by two times. These results suggest that a thin metallic TaN layer as an electrode can effectively passivate the Ge surface and alleviate the Fermi-level pinning effect, thus reducing the contact resistance and the recombination current at the interface. TaN can be considered as a promising electrode material for Ge device applications.

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