摘要:
为进一步揭示硫系玻璃基掺Er~（3＋）微结构光纤对于中红外波段信号的放大特性,采用熔融淬火法研制了Er~（3＋）离子掺杂的Ga_5Ge_（20）Sb_（10）S_（65）硫系玻璃,测试了玻璃样品的吸收光谱和2.7μm波段荧光光谱,利用Judd-Ofelt和Futchbauer-Ladenburg理论分别计算得到了Er~（3＋）离子的辐射跃迁概率、辐射寿命以及2.7μm波段受激发射截面.在此基础上,建立了一个980 nm抽运下该玻璃基掺Er~（3＋）微结构光纤2.7μm波段中红外信号的放大模型,理论上研究了其作为2.7μm波段中红外信号增益介质时的光放大特性.结果显示,硫系玻璃基掺Er~（3＋）微结构光纤具有优异的高增益和宽带放大品性.在200 mW抽运功率激励下的100 cm光纤长度上,最大小信号增益超过了40 dB,高于30 dB信号增益的放大带宽达到了120 nm（2696—2816 nm）.研究表明,Ga_5Ge_（20）Sb_（10）S_（65）硫系玻璃基掺Er~（3＋）微结构光纤是一种理想的可应用于2.7μm波段中红外宽带放大器的增益介质.
Abstract:
In order to demonstrate the characteristics of chalcogenide glass Er3＋-doped microstructured optical fiber（MOF） amplifying the mid-infrared band signal,Er3＋-doped Ga5Ge20Sb10S65 chalcogenide glass is prepared with high temperature melt-quenching method. The absorption spectrum and 2.7μm band fluorescence spectrum of glass sample are measured,and the spectroscopic parameters such as radiative transition probability,radiative lifetime and 2.7μm band stimulated emission cross-section of Er3＋ ion are calculated and analyzed according to the Judd-Ofelt and Futchbauer-Ladenburg theories.The 2.7μm band mid-infrared signal amplifying model of Ga5Ge20Sb10S65 chalcogenide glass Er3＋-doped MOF under the excitation of 980 nm is presented,and the amplifying characteristics of 2.7 mn-band mid-infrared signals for chalcogenide glass Er3＋-doped MOF are investigated theoretically.The results show that the chalcogenide glass Er3＋-doped MOF exhibits a higher signal gain and very broad gain spectrum：its maximal gain of small signal exceeds 40 dB and amplifying bandwidth of higher than 30 dB gain reaches about 120 nm（2696—2816 nm） for a 100 cm long chalcogenide glass erbium-doped MOF with a pump power of 200 mW.The theoretical studies indicate that the Ga5Ge20Sb10S65 chalcogenide glass Er3＋-doped MOF is an excellent gain medium which can be applied to broadband amplifiers in the mid-infrared wavelength region.
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