Keywords: 
• 应变Ge /
• 价带结构 /
• k·p理论 /
• 色散关系模型

Abstract: Based on the k - p theory, the valence-band dispersion model for biaxial strained Ge/Sil-xGex is derived by taking strained Hamiltonian perturbation into account. The model can be used to calculate the valence band structure and hole effective mass along arbitrarily k wavevector direction in strained Ge grown on arbitrarily oriented relaxed Sil-xGex virtual substrate. The MATLAB simulation results of the model show that by comparison with relaxed Ge, the more anisotropy of the hole effective mass occurs in strained SilxGe~ and the hole effective mass of the top valence band decreases with the increase of Ge fraction. The results can supply valuable references to the conduction channel design related to stress and orientation in the Si-based strained Ge MOS devices and integrated circuits.