摘要:
本文基于人体放电模型分别对肖特基势垒二极管的阴极和阳极进行同一电压脉冲下的多次放电,利用热电子发射理论、1/f噪声的迁移率涨落模型和白噪声理论,分别深入研究静电放电损伤对器件I-V和低频噪声的影响.结果表明,静电放电作用于肖特基二极管阴极时损伤更严重,噪声参量变化率更大.随着放电次数的增加,正向特性无变化,反向电流总体增大,偶有减小;而正向和反向1/f噪声均增大.鉴于噪声与应力条件下器件内部产生的缺陷与损伤有关,且更敏感,故可将低频噪声特性用作肖特基二极管的静电放电损伤灵敏表征工具.
Abstract:
Based on the analysis of thermal electron emission, the model of the carrier mobility fluctuation and the white noise theory, the effect of electrostatic discharge （ESD） on the I-V and low frequency noise of Schottky barrier diode （SBD） is discussed in this paper. The different Human Body Model（HBM） ESD injected times with the same voltage peaks are applied to the cathode and anode separately. It is found that the diode subjected to the cathode stress shows greater degradation than subjected to the anode stress, and the magnitude of noise shows significant change. With the increase of ESD injected times, the forward characteristic has no change, while reverse current almost increases at each time. The magnitudes of forward and reverse 1If noise increase all the time. In view of the relationship between defects and damage, and the noise sensibility, the low frequency noise can serve as a tool for researching the sensitivity to the electrostatic discharge damage of SBD.
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