摘要:
近些年来,越来越多的发光二极管采用铟锡氧化物（ITO）作为电流扩展层,但是如果不对其进行任何处理,得到的发光二极管的电学特性很差,要得到好的电学特性需要对长有铟锡氧化物的发光二极管进行退火处理.针对不同的退火时间和退火温度对发光二极管的电学特性影响不同的问题,通过测量不同条件下退火得到的发光二极管的理想因子和串联电阻,根据Shah等人提出的模型进行分析,推测出铟锡氧化物和P型氮化镓的接触特性.结果表明：发光二极管的电学特性开始随着退火温度的升高和时间的增加到达一个优值,如果继续增加温度或者时间都会导致发光二极管电学特性的下降.这样有利于优化退火温度和时间,得到电学性能较好的器件.
Abstract:
In the recent years, more and more light-emitting diodes use indium tin oxide （ITO） as the current spreading layer. But if there is not any treatment, the electrical properties of light emitting diode are very poor. So to get excellent electrical properties of light emitting diode, annealing is an effective method to improve the electrical properties of light emitting diode using indium tin oxide as the current spreading layer. However, the annealing time and temperature can affect the electrical property of light emitting diode individually. In order to investigate this problem, we measured the series resistance and ideality factor of the light emitting diode got under different annealing time and annealing temperature. According to the model proposed by Jay M. Shah, we can inferred the characteristics of indium tin oxide and P-type GaN contact. The results showed that： the electrical properties of the light-emitting diode can reach an excellent value with increasing annealing temperature and time, and if continuing to increase in temperature or time, it can lead to a decline in light-emitting diode electrical properties. It is very helpful to optimize the annealing temperature and time and manufacture excellent electrical properties of devices.
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