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新型电子俘获型光存储材料Sr2Sn04：Sb3＋的发光性能研究
The luminescence properties of a novel electron trapped material Sr2SnOi：Sb3＋ for optical storage
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摘要: 采用高温固相法在1300°C的温度获得了一种新型电子俘获型光存储材料Sr2Sn04：Sb3＋．结果表明：208nm（Sb3＋的So-P1）和265nm（1so-3P1）的紫外光是Sr2Sn04：Sb3＋的最有效信息写入光源；其发射是覆盖400-700nm的宽带（3Po1-1So），肉眼可看到淡黄色白光，色坐标为（0．341，0．395）．热释光谱研究结果表明：Sr2Sn04：Sb3＋有分别位于39°C，124°C，193°C和310°C的四个热释峰．其中，39°C的热释峰强度很低，因而Sr2Sn04：Sb3＋只具有不到140S的微弱余辉．而310°C的高温热释峰在空置1天后，仍能保持约45．6％的初始强度，并对980nm的红外光有很好的红外上转换光激励响应．因此，Sr2Sn04：Sb3＋是一种具有一定的信息存储应用潜力的新型光存储发光材料．
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关键词:
- Sr2SnO4：Sb3+ /
- 红外上转换光激励 /
- 光存储
Abstract: A novel electron trapped material Sr2SnO4：Sb3＋ for optical storage is successfully obtained by conventional solid state method at 1300 °C It indicates that the 1So - 3p1 （208 nm） and 1So -3P1 （265 nm） transitions of Sb3＋ are the most efficient writing light source. Its emission covers 400-700 nm and can be attributed to 3po,1 -1So transition of Sb3＋. We can observe yellowish white light and its color coordination is （0.341, 0.395）. The thermoluminescence of Sr2SnO4：Sb3＋ contains four peaks at about 39 °C, 124 °C, 193 °C and 310 °C, respectively. The intensity of peak at 39 °C is low and thus it has a weak afterglow which can last only 140 s. However, even after putting it in dark for I day, the peak at 310 C can still keep 45.6% of its original intensity and can be efficiently stimulated by 980 nm infrared laser. As a conclusion, the Sr2SnO4：Sb3＋ is a promising electron trapping material for application in optical storage. -
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