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InAIAs／GaSbAs／InPDHBT与InP／GaSbAs／InPDHBT性能比较分析
Comparison of the performance for InAIAs/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT
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摘要: 双异质结双极晶体管（DHBT）的性能与发射区-基区（E．B）异质结和基区．集电区（B．C）异质结的能带突变类型关系密切，本文基于热场发射．扩散模型，对两类不同能带结构类型的新型DHBT的性能做了比较分析．结论表明：与作为当今研究热点的E．B和B．C异质结构均为全交错II型能带结构的InP／GaSbAs／InPDHBT的性能相比，E．B异质结采用传统I型、B．C异质结采用交错II型的一类新型能带结构的InAlAs／GaSbAs／InPDHBT虽然在开启电压上更高，但具有更好的电流驱动能力、直流增益和高频性能．
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关键词:
- InAlAs/GaSbAs /
- InP/GaSbAs /
- II型双异质结双极晶体管
Abstract: The characteristics of a double heterojunction bipolar transistor（DHBT） depend closely on the type of band alignment structure at the hetero-interface between emitter-base（E-B） heterojunction and base-collector（B-C） heterojunction. Based on thermionic-field- diffusion model, the comparisons are made of the DC and the RF characteristics between two novel HBTs, that is, InA1As/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT, of which the former has a type-I E-B junction and a type-II B-C junction and the later has a type-II E-B junction and a type-II B-C junction. The simulation results show that DHBT with a type-I E-B junction and a type-II B-C junction has much better current driving capability, DC gain and RF performance, although it has a slightly high turn-on voltage. -
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