Keywords: 
• 光子晶体 /
• 电单负材料 /
• 隧穿模 /
• 透射率

Abstract: Abstract An （AB）^N（BA）^N-type one-dimensional photonic crystal is made from common material A（SiO2） and electric single-negative material B. Numerical calculation results indicate that there is a very sharp tunneling model at 1907.3 nm of the original band. When the incident angle 0 increases, the transmittance and the full-width half-maximum of the tunneling mode remains the same, but its position is blue shifted. The value of ｜dλ/dθ｜turns larger when the incident angel is in a range from 15° to 65°. When permeability of B medium P.B increases from 5 to 10, the position of the tunneling model is only red shifted. When geometric thickness of the dielectric increases, the transmittance of the tunneling model remains unchanged, but its position is red shifted obviously and its full-width half-maximum increase slightly.