Keywords: 
• 部分耗尽绝缘层附着硅 /
• 静态随机存储器 /
• 总剂量效应 /
• 功耗电流

Abstract: In this paper, the changes of electrical parameters and their functional errors with the total radiation dose are studied, when the PDSOI static random access memory （SRAM） is irradiated under different total doses. After the SOI SRAM is irradiated by the 6^Co-γray, the total dose radiation damage mechanism and the correlation between the changes of device parameters and function errors are discussed. For the large-scale SOI integrated circuits, this provides a possible method to further study the total dose radiation hardening and the radiation damage assessment of the devices. It is indicated that the increase of current consumption is due mainly to the radiation-induced leakage current from both field oxygen and buried oxide. The drift of threshold voltage creates the decline in output high level, the slight increase in output low level, the significant reduction in peak-peak value, and the increase of transmission delay. When the total dose accumulates and reaches a certain amount of dose, the logic mutation error emerges, resulting in the failure of shutdown function. There is a certain correlation between the transmission delay, the output high and the logic error.