带有n^＋深阱的三阱CMoS工艺中寄生NPN双极效应及其对电荷共享的影响

刘必慰; 陈建军; 陈书明; 池雅庆

物理学报

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刘必慰, 陈建军, 陈书明, 池雅庆. 2012: 带有n^＋深阱的三阱CMoS工艺中寄生NPN双极效应及其对电荷共享的影响, 物理学报, 61(9): 360-366.

引用本文:

刘必慰, 陈建军, 陈书明, 池雅庆. 2012: 带有n^＋深阱的三阱CMoS工艺中寄生NPN双极效应及其对电荷共享的影响, 物理学报, 61(9): 360-366.

2012: NPN bipolar effect and its influence on charge sharing in a tripe well CMOS technology with n^＋ deep well, Acta Physica Sinica, 61(9): 360-366.

Citation:

2012: NPN bipolar effect and its influence on charge sharing in a tripe well CMOS technology with n^＋ deep well, Acta Physica Sinica, 61(9): 360-366.

带有n^＋深阱的三阱CMoS工艺中寄生NPN双极效应及其对电荷共享的影响

国防科技大学计算机院微电子与微处理器研究所,长沙,410073

NPN bipolar effect and its influence on charge sharing in a tripe well CMOS technology with n^＋ deep well

摘要: 基于三维TCAD器件模拟,研究了带有n^＋深阱的90 nm三阱CMOS器件在重离子辐照下产生的电荷共享效应.研究结果表明在重离子辐照时,n^＋深阱会导致寄生的NPN双极型晶体管触发,显著增强NMOS间的电荷共享,其放大因子达到双阱工艺中寄生PNP晶体管放大因子的2—4倍.进而分别研究了n阱接触和P阱接触对寄生NPN双极放大的影响,结果表明增大P阱接触的面积和减小n阱接触的距离将抑制NPN晶体管的放大作用,而增大n阱接触的面积将增强NPN的放大作用.
- 电荷共享 /
- 单粒子效应 /
- n^+深阱 /
- 寄生双极型晶体管
Abstract: In this paper, we investigate the charge sharing collection induced by heavy ion radiation in a tripe well CMOS technology with n^＋ deep well though 3-D TCAD device simulation. Result shows that n^＋ deep well will induce the parasitical NPN bipolar transistor, and therefore enhance the charge sharing between NMOS remarkably. The enhancement factor is 2-4 times that in PNP bipolar in dual well technology. Furthermore, the effects of n-well contact and p-well contact on NPN bipolar are studied. The result shows that the NPN bipolar enhancement factor will decrease with the increase of p-well contact area and with the decreasing of its distance to device, while the NPN bipolar enhancement factor will increase with the increase of n-well contact area.

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带有n^＋深阱的三阱CMoS工艺中寄生NPN双极效应及其对电荷共享的影响

国防科技大学计算机院微电子与微处理器研究所,长沙,410073

关键词:

摘要: 基于三维TCAD器件模拟,研究了带有n^＋深阱的90 nm三阱CMOS器件在重离子辐照下产生的电荷共享效应.研究结果表明在重离子辐照时,n^＋深阱会导致寄生的NPN双极型晶体管触发,显著增强NMOS间的电荷共享,其放大因子达到双阱工艺中寄生PNP晶体管放大因子的2—4倍.进而分别研究了n阱接触和P阱接触对寄生NPN双极放大的影响,结果表明增大P阱接触的面积和减小n阱接触的距离将抑制NPN晶体管的放大作用,而增大n阱接触的面积将增强NPN的放大作用.

English Abstract

NPN bipolar effect and its influence on charge sharing in a tripe well CMOS technology with n^＋ deep well

国防科技大学计算机院微电子与微处理器研究所,长沙,410073

Keywords:

Abstract: In this paper, we investigate the charge sharing collection induced by heavy ion radiation in a tripe well CMOS technology with n^＋ deep well though 3-D TCAD device simulation. Result shows that n^＋ deep well will induce the parasitical NPN bipolar transistor, and therefore enhance the charge sharing between NMOS remarkably. The enhancement factor is 2-4 times that in PNP bipolar in dual well technology. Furthermore, the effects of n-well contact and p-well contact on NPN bipolar are studied. The result shows that the NPN bipolar enhancement factor will decrease with the increase of p-well contact area and with the decreasing of its distance to device, while the NPN bipolar enhancement factor will increase with the increase of n-well contact area.

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带有n^＋深阱的三阱CMoS工艺中寄生NPN双极效应及其对电荷共享的影响

NPN bipolar effect and its influence on charge sharing in a tripe well CMOS technology with n^＋ deep well

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带有n^＋深阱的三阱CMoS工艺中寄生NPN双极效应及其对电荷共享的影响

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NPN bipolar effect and its influence on charge sharing in a tripe well CMOS technology with n^＋ deep well

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